Industrial Technology Research Institute

Shi-Yuan Tong

Mean-Jue Tung

Yu-Ting Huang

Ming-Da Yang

Chun-Pin Wu

Kai-Shin Li

Minn-Tsong Lin

Yin-Ming Chang

An electrostatic sensing system configured to sense an electrostatic information of a fluid inside a fluid distribution component and including an electrostatic sensing assembly, a signal amplifier and an analog-to-digital converter. The electrostatic sensing assembly includes a sensing component, and a shield. The sensing component is configured to be disposed at the fluid distribution component. The sensing component is disposed through the fluid distribution component so as to be partially located in the fluid distribution component. The shield surrounds a part of the sensing component that is located in the fluid distribution component. At least part of the shield is located on an upstream side of the sensing component. The signal amplifier is electrically connected to the sensing component. The analog-to-digital converter is electrically connected to the signal amplifier. The shield has an opening spaced apart from the sensing component.

Electrostatic sensing system and electrostatic sensing assembly

A magnetic field structure is provided and includes: two magnetic poles disposed in a magnetic circuit path and opposite to one another to form a space therebetween for receiving an element to be tested; a magnetic field source for providing a magnetic field in the space; and an optical positioning element disposed in one of the two magnetic poles for optically positioning the element to be tested. Therefore, the magnetic field structure can simultaneously provide a strong magnetic field and a precise positioning function.

Magnetic field structure

An electromagnetic property measuring device includes a magnetic conductive structure, a coil, and a scattering parameter measuring unit. The magnetic conductive structure includes a first side facing a sample to be tested and a second side opposite to the first side, and the first side has a magnetic gap. The coil surrounds the magnetic conductive structure to generate a magnetic field with the magnetic conductive structure. The scattering parameter measuring unit is disposed at the first side and located within a range of the magnetic field.

Electromagnetic property measuring device, electromagnetic property measuring system and electromagnetic property measuring method

An electrostatic detecting device adapted to an object. The electrostatic detecting device includes a substrate, a sensing electrode, a dielectric layer and a ground electrode. The substrate has a first surface and a second surface opposite to the first surface. The sensing electrode is disposed on the first surface and has a sensing surface. The sensing surface faces away from the first surface and configured to face the object. The dielectric layer having a dielectric constant greater than 1 is disposed on the second surface. The ground electrode is disposed apart from the sensing electrode by a spacing. The dielectric layer is disposed between the sensing electrode and the ground electrode.

Electrostatic detecting device

An electrostatic measuring method for an inner wall of a fluid pipeline includes a step of disposing a grounded metal plate to an outer wall of the fluid pipeline; a step of forming a grounding effect through the grounded metal plate and the outer wall, wherein the grounded metal plate has induced charges, the induced charges combine outer-wall existing charges on the outer wall to form total outer-wall charges, and the total outer-wall charges are related to charges to be measured on the inner wall of the fluid pipeline; and, a step of measuring an electrostatic voltage above the grounded metal plate so as to obtain the charges to be measured on the inner wall of the fluid pipeline. In addition, an electrostatic measuring system for inner wall of fluid pipeline is also provided.

Electrostatic measuring system for inner wall of fluid pipeline and measuring method thereof

A current detection device applied to a multi-core conducting wire comprises a carrier, magnetic sensors and a processor wherein the processor is connected to the magnetic sensors. The carrier has an accommodating channel for accommodating the multi-core conducting wire. The magnetic sensors are disposed at the carrier, surround the accommodating channel, equally share 360 degree of the peripheral of the accommodating channel, and are configured to measure an alternating magnetic field of the multi-core conducting wire to respectively obtain magnetic field measured values, wherein each of the magnetic sensors corresponds to a respective one of the magnetic field measured values. The processor stores a current decoupling model, and is configured to obtain the magnetic field measured values from the magnetic sensors and to calculate a current value of each core wire of the multi-core conducting wire according to the current decoupling model and the magnetic field measured values.

Current detection device and method

An electrostatic detecting system and an electrostatic detecting method for detecting the static electricity generated at an active surface of a substrate are provided. The electrostatic detecting system includes a sensing apparatus and a signal processing apparatus. The sensing apparatus is disposed at least adjacent to a back surface opposite to the active surface of the substrate, for measuring the static electricity generated at the active surface and generating an initial electric signal. The signal processing apparatus is electrically connected to the sensing apparatus, for receiving the initial electric signal and correcting the initial electric signal based on a voltage compensation value to obtain a final electric signal.

Electrostatic detecting system and method

A tunneling magnetoresistance device with high magnetoimpedance effect, a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer which is located between the first ferromagnetic layer and the second ferromagnetic layer. Wherein an alternating current is applied to the tunneling magnetoresistance device, the tunneling magnetoresistance device has at least 100% variation of real components between an applied first alternating frequency and an applied second alternating frequency, at least 25% variation of imaginary components below the first alternating frequency, and at least 8.5% variation of magneto capacitance (MC) ratio which are generated along the magnetization direction.

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Hsinchu County, Taiwan

Shi-Yuan Tong