Postech Foundation

Shi-Woo Rhee

Sang-Woo Kang

Jung-Hyun Lee

Doo-Hwan Cho

Dae-Hwan Kim

Jai-Wook Park

Won-Hee Nam

Jae-Young Shim

Sang-Ki Kwak

Jong-Ho Yun

A bismuth yttrium titanate (BYT) film having the composition of formula (I) has enhanced residual polarization and electric fatigue properties with excellent ferroelectric property, and therefore, it can be advantageously used in an electric or electronic device including a FRAM device:BiYTiO&#x2003;&#x2003;(I)wherein x is an integer of 0.1 to 2.

Yttrium-doped bismuth titanate thin film and preparation thereof

A low dielectric constant hydrogenated silicon-oxycarbide (SiCO:H) film is prepared by bringing an organosilicon or organosilicate compound having at least one vinyl or ethynyl group, or a mixture of a saturated organosilicon or organosilicate compound and an unsaturated hydrocarbon into contact with a substrate in the presence of an O-containing gas plasma.

Method for preparing low dielectric films

A lanthanum complex of formula (I) having a low evaporation temperature can be used as a useful precursor for MOCVD of a BLT thin layer on semiconductor devices.wherein A is pentamethyldiethylenetriamine(PMDT) or triethoxytriethyleneamine(TETEA).

Lanthanum complex and process for the preparation of a BLT layer using same

The present invention relates to an organometal complex and a chemical vapor deposition (CVD) or atomic layer deposition (ALD) method for preparing a metal silicate thin layer using same. The inventive method can easily prepare the metal silicate thin layer having a desired composition which can be effectively used as a gate insulating layer for various semiconductor devices.

Organometal complex and method of depositing a metal silicate thin layer using same

An organometallic complex of formula(I) having a low evaporation temperature can be used as a precursor for the MOCVD of a metal compound thin film on semiconductor devices

Organometallic complex process for the preparation thereof and metal organic chemical vapor deposition using same

A process for preparing a metallic interconnecting plug in a semiconductor device which comprises the steps of: i) forming an insulating layer on the surface of a semiconductor substrate or a metal underlayer of the semiconductor device, ii) forming a hole in the insulating layer to expose the surface of the semiconductor substrate or the metal underlayer, iii) exposing the surface of the insulating layer to the vapor of a blocking agent under a pressure ranging from 10.sup.-12 to 10 torr for a controlled time period so that a blocking layer is formed only on the outer surface of the insulating layer, the blocking layer not extending over the inside walls of the hole, iv) selectively depositing a conductive metal in the hole using a chemical vapor deposition method to form the metallic interconnecting plug which extends from the surface of the semiconductor substrate or the metal underlayer to the level of the outer surface of the insulating layer, and v) removing the blocking layer from the surface of the insulating layer.

Process for selective metal deposition in holes of semiconductor device

A liquid organocuprous compound of formula (I) of the present invention can be conveniently used in a low-temperature CVD process for the production of a contaminant-free copper film having good step-coverage and hole-filling properties: ##STR1## wherein: R.sup.1 represents a C.sub.3-8 cycloalkyl group, and

Growing community of inventors

Pohang-si, South Korea

Shi-Woo Rhee