Yangtze Memory Technologies Co., Ltd.

Shi Qi Huang

Wei Liu

Jun Chen

Liang Chen

Jifeng Zhu

Lei Xue

Si Ping Hu

Tao Wang

Zi Qun Hua

Jia Wen Wang

Cheng Gan

Shunfu Chen

A method for forming a gate structure of a 3D memory device is provided. The method comprises forming an etch stop structure in a first wafer, forming a first through contact in contact with the etch stop structure, bonding the first wafer to a second wafer to electrically connect the first through contact to a CMOS device of the second wafer, and forming a through substrate contact penetrating a first substrate of the first wafer and the etch stop structure, and in electrically contact with the CMOS device through the first through contact.

Three-dimensional memory devices and fabricating methods thereof

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a method for forming a semiconductor device is disclosed. A first interconnect layer including first interconnects is formed above a first substrate. A first bonding layer including first bonding contacts is formed above the first interconnect layer, such that each first interconnect is in contact with a respective first bonding contact. A second interconnect layer including second interconnects is formed above a second substrate. A second bonding layer including second bonding contacts is formed above the second interconnect layer, such that at least one second bonding contact is in contact with a respective second interconnect, and at least another second bonding contact is separated from the second interconnects. The first and second substrates are bonded in a face-to-face manner, such that each first bonding contact is in contact with one second bonding contact at a bonding interface.

Hybrid bonding using dummy bonding contacts

A method for forming a gate structure of a 3D memory device is provided. The method comprises forming an array wafer including a periphery region and a staircase and array region. A process of forming the array wafer comprises forming an etch stop layer on a first substrate in the periphery region, forming an array device on the first substrate in the staircase and array region, and forming at least one first vertical through in the periphery region and in contact with the etch stop layer. The method further comprises forming a CMOS wafer, and bonding the array wafer and the CMOS wafer. The method further comprises forming at least one through substrate contact penetrating the first substrate and the etch stop layer, and in contact with the at least one first vertical through contact.

A method for forming a gate structure of a 3D memory device is provided. The method comprises forming an array wafer including a periphery region and a staircase and array region. A process of forming the array wafer comprises forming an array well structure in a first substrate in the periphery region, forming an array device on the first substrate in the staircase and array region, and forming at least one vertical through contact in the periphery region and in contact with the array well structure. The method further comprises forming a CMOS wafer, and bonding the array wafer and the CMOS wafer. The method further comprises forming at least one through substrate contact penetrating the first substrate and the array well structure, and in contact with the at least one vertical through contact.

Local word line driver device, memory device, and fabrication method are provided. A local word line driver device includes a substrate and an array of transistor structures formed on the substrate. The transistor structures are configured in rows and columns. The substrate includes a plurality of first field regions each between adjacent rows of the transistor structures, and a plurality of second field regions each between adjacent columns of the transistor structures. A deep trench isolation structure is formed in at least one field region of: the plurality of first field regions or the plurality of second field regions, of the substrate.

Local word line driver device, memory device, and fabrication method thereof

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. At least one first interconnect is a first dummy interconnect. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. At least one second interconnect is a second dummy interconnect. The second semiconductor structure further includes a second bonding layer including second bonding contacts. Each second interconnect is in contact with a respective second bonding contact. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with a respective second bonding contact at the bonding interface.

Hybrid bonding using dummy bonding contacts and dummy interconnects

A method for forming a gate structure of a 3D memory device is provided. The method comprises forming an array wafer including a periphery region and a staircase and array region. A process of forming an array wafer comprises forming an alternating dielectric etch stop structure on a first substrate in the periphery region, forming an array device on the first substrate in the staircase and array region, and forming at least one first vertical through contact in the periphery region and in contact with the alternating dielectric etch stop structure. The method further comprises forming a CMOS wafer and bonding the array wafer and the CMOS wafer. The method further comprises forming at least one through substrate contact penetrating the first substrate and the alternating dielectric etch stop structure, and in contact with the at least one first vertical through contact.

Embodiments of bonded semiconductor structures and fabrication methods thereof are disclosed. In an example, a semiconductor device includes a first and a second semiconductor structures. The first semiconductor structure includes a first interconnect layer including first interconnects. The first semiconductor structure further includes a first bonding layer including first bonding contacts. Each first interconnect is in contact with a respective first bonding contact. The second semiconductor structure includes a second interconnect layer including second interconnects. The second semiconductor structure further includes a second bonding layer including second bonding contacts. At least one second bonding contact is in contact with a respective second interconnect. At least another second bonding contact is separated from the second interconnects. The semiconductor device further includes a bonding interface between the first and second bonding layers. Each first bonding contact is in contact with one of the second bonding contacts at the bonding interface.

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Wuhan, China

Shi Qi Huang