Samsung Electronics Co., Ltd.

Shi Ii Quan

Dong-Suk Shin

Jeong-yun Lee

Yeong-Jong Jeong

Si-Hyung Lee

Integrated circuit devices including Fin field effect transistors (finFETs) and methods of forming those devices are provided. The methods may include forming a fin on a substrate and forming a gate line on the fin. The method may also include forming a first recess in the fin having a first width and a first depth and forming a second recess in the first recess having a second width that is less than the first width and having a second depth that is greater than the first depth. The method may further include forming a source/drain region in the first and second recesses.

Growing community of inventors

Suwon Si, South Korea

Shi Ii Quan