Taiwan Semiconductor Manufacturing Comp. Ltd.

Shi-Chuang Hsiao

Alexander Kalnitsky

Kong-Beng Thei

Chien-Chih Chou

Yi-Huan Chen

Hsiao-Chin Tuan

Ta-Wei Lin

Yu-Hong Kuo

In some embodiments, the present disclosure relates to a semiconductor device comprising a source and drain region arranged within a substrate. A conductive gate is disposed over a doped region of the substrate. A gate dielectric layer is disposed between the source region and the drain region and separates the conductive gate from the doped region. A bottommost surface of the gate dielectric layer is below a topmost surface of the substrate. First and second sidewall spacers are arranged along first and second sides of the conductive gate, respectively. An inner portion of the first sidewall spacer and an inner portion of the second sidewall spacer respectively cover a first and second top surface of the gate dielectric layer. A drain extension region and a source extension region respectively separate the drain region and the source region from the gate dielectric layer.

Recessed gate for an MV device

Growing community of inventors

Hsin-Chu, Taiwan

Shi-Chuang Hsiao