Taiwan Semiconductor Manufacturing Comp. Ltd.

Shi-Chieh Lin

Victor Y Lu

Pu-Fang Chen

Yeur-Luen Tu

Cheng-Ta Wu

Yu-Hung Cheng

Ru-Liang Lee

Yu-Lung Yeh

Yen-Hsiu Chen

Po-Jung Chiang

A representative method of manufacturing a silicon-on-insulator (SOI) substrate includes steps of depositing an etch stop layer on a dummy wafer, growing an epitaxial silicon layer on the etch stop layer, forming a gettering layer on the epitaxial silicon layer, bonding a buried oxide layer of a main wafer to the gettering layer, and removing the dummy wafer and etch stop layer to expose the epitaxial silicon layer. The SOI substrate has an epitaxial silicon layer adjoining the gettering layer, with the gettering layer interposed between the buried oxide layer and the epitaxial silicon layer.

Structure for embedded gettering in a silicon on insulator wafer

Various embodiments of the present application are directed to a method for forming a semiconductor-on-insulator (SOI) device with an impurity competing layer to absorb potential contamination metal particles during an annealing process, and the SOI structure thereof. In some embodiments, an impurity competing layer is formed on the dummy substrate. An insulation layer is formed over a support substrate. A front side of the dummy wafer is bonded to the insulation layer. An annealing process is performed and the impurity competing layer absorbs metal from an upper portion of the dummy substrate. Then, a majority portion of the dummy substrate is removed including the impurity competing layer, leaving a device layer of the dummy substrate on the insulation layer.

Fabrication method of metal-free SOI wafer

A method of manufacturing a semiconductor structure includes the following operations. A wafer includes a crystal orientation represented by a family of Miller indices comprising &#x3c;lmn&#x3e;, wherein l+m+n=1. A first chip and a second chip are over the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. A first included angle between the first direction and the crystal orientation is greater than or equal to 0 degree and less than 45 degrees.

Semiconductor structure and method for manufacturing the same

Structure and method for embedded gettering in a silicon on insulator wafer

A method of manufacturing a semiconductor structure includes the following operations. A wafer with an orientation mark at a first crystal orientation represented by a family of Miller indices comprising &#x3c;ijk&#x3e; is provided, wherein ijk=2. A first chip and a second chip are connected to a first surface of the wafer. A first edge of the first chip and a second edge of the second chip are adjacent to each other. A boundary extending in a direction between the first edge and the second edge is formed. The direction is not parallel to the first crystal orientation.

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Hsinchu, Taiwan

Shi-Chieh Lin