Phison Electronics Corporation

Shi-Chieh Hsu

Wei Hung Lin

Shih-Jia Zeng

Hsiao-Yi Lin

Chen Yang Tang

A read voltage adjustment method, a memory storage device, and a memory control circuit unit are disclosed. The method includes: sending a write command sequence instructing to program a plurality of first memory cells in a rewritable non-volatile memory module; sending a first read command sequence instructing to read the programmed first memory cells using a first read voltage level to obtain first count information; obtaining first compensation information corresponding to the first read voltage level, wherein the first compensation information reflects a deviation in evenly programming the first memory cells to a plurality of states; and adjusting the first read voltage level according to the first count information, the first compensation information, and default count information corresponding to the first read voltage level.

Growing community of inventors

Taichung, Taiwan

Shi-Chieh Hsu