Boe Technology Group Co., Ltd.

Hefei Xinsheng Optoelectronics Technology Co., Ltd.

Shengping Du

Tongshang Su

Dongfang Wang

Guangcai Yuan

Bin Zhou

Ning Liu

Wei Li

Jun Feng Liu

Liangchen Yan

Wei Song

Qinghua Guo

Yang Zhang

Yu Yang

Tao Sun

Kai Xu

Qinghe Wang

Ce Zhao

Yingbin Hu

Yun Ma

Wen Guo

Jingjing Xia

Lihua Liu

Zhengfeng Huang

An array substrate, a preparing method thereof, a display panel and a display apparatus are disclosed. The array substrate includes: a base substrate (); a driving circuit structure () on the base substrate (); a planarization layer () and a plurality of electrode structures () successively located on a side, facing away from the base substrate (), of the driving circuit structure (); insulation structures () in gap areas between adjacent electrode structures (); and pixel defining structures () on a side, facing away from the base substrate (), of the insulation structures (). The thickness of the insulation structures () is not smaller than the thickness of the electrode structures (). An orthographic projection of the pixel defining structures () on the base substrate () at least completely covers the insulation structures ().

Array substrate, method for preparing array substrate, display panel and display apparatus

A display panel includes a substrate, and a pixel defining layer and a cathode layer that are laminated on the substrate. The pixel defining layer includes a plurality of strip-shaped first pixel defining structures and a plurality of strip-shaped second pixel defining structures. A slope angle of the second pixel defining structure is greater than a slope angle of the first pixel defining structure, and the second pixel defining structure is configured to separate portions of the cathode layer on two sides of the second pixel defining structure.

Display panel, method for manufacturing same, and display device

A method for manufacturing a light-emitting component, including forming an auxiliary electrode and a first electrode arranged at an interval on a base substrate; depositing, by means of a mask with a hollow area, a light-emitting layer on the base substrate on which the auxiliary electrode and the first electrode are formed; and forming a second electrode on the base substrate on which the light-emitting layer is formed. The light-emitting layer covers at least part of the first electrode, and at least a partial area of the auxiliary electrode is exposed outside the light-emitting layer. The second electrode covers at least part of the light-emitting layer and the at least partial area of the auxiliary electrode, and the second electrode is connected to the at least partial area of the auxiliary electrode.

Light-emitting component, manufacturing method therefor, mask, and display device

A display substrate and a manufacturing method thereof are disclosed. The display substrate is divided to have a non-pixel region and a color pixel region. The manufacturing method includes: forming a thin film transistor (TFT) on a base substrate in the non-pixel region; forming a passivation layer on the TFT; forming a color filter on the passivation layer in the color Pixel region; forming a planarization layer on the passivation layer and the color filter; thinning a thickness of a portion of the planarization layer located in the color pixel region; and forming a display electrode on the planarization layer and connecting the display electrode to a drain electrode of the TFT through a via hole.

Display substrate and manufacturing method thereof

A fabrication method of a thin film transistor, a fabrication method of an array substrate, a display panel, and a display device are provided. The fabrication method of the thin film transistor comprises: forming a gate electrode, a gate insulating layer and an oxide active layer; forming an inverted trapezoidal dissolution layer whose cross section is inverted trapezoidal on the oxide active layer, the inverted trapezoidal dissolution layer being soluble in an organic solvent; forming a source/drain layer on the oxide active layer, the gate insulating layer and the inverted trapezoidal dissolution layer, a thickness of the inverted trapezoidal dissolution layer being greater than a thickness of the source/drain layer; and dissolving and removing the inverted trapezoidal dissolution layer with the organic solvent and removing the source/drain layer on the inverted trapezoidal dissolution layer, to form a source electrode and a drain electrode.

Fabrication method of thin film transistor, fabrication method of array substrate, display panel, and display device

An organic light emitting diode (OLED) display panel and a manufacture method thereof, a display device are disclosed. The method includes providing a base substrate, including a display area and a package area; forming a driving transistor, a passivation layer and an OLED display unit on the base substrate, wherein the OLED display unit and the driving transistor are formed in the display area, the passivation layer is formed in both the display area and the package area and includes a plurality of recesses in the package area and a via hole in the display area, and the via hole and the plurality of recesses are formed by same one patterning process; coating a sealant in the package area to cover the plurality of recesses; and providing a package substrate, the package substrate and the base substrate being assembled together and sealed oppositely by the sealant.

OLED display panel and manufacture method thereof, display device

A method for manufacturing a thin-film transistor (TFT), an array substrate and a display device are disclosed. The manufacturing method includes: forming a photoresist layer provided with a completely retained region, a partially-retained region and a completely removed region on a metal film by a half-tone mask process; forming a source/drain metal layer by etching the metal film under the cover of the photoresist layer; removing the photoresist layer in the partially-retained region; forming an active layer by patterning the semiconductor film; and removing residual photoresist layer.

Method for manufacturing TFT, array substrate and display device

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Beijing, China

Shengping Du