Hitachi High-tech Corporation

Shengnan Yu

Takashi Uemura

Shunsuke Tashiro

Yasushi Sonoda

Masahiro Nagatani

Kiyohiko Sato

A plasma processing apparatus for finely adjusting conductance of exhaust gas and controlling pressure in a processing chamber with high accuracy, including a processing chamber; a base plate formed with an exhaust opening; an exhaust portion lid disposed in the processing chamber so as to face the exhaust opening; an exhaust device configured to exhaust a gas in the processing chamber via the exhaust opening; and an actuator configured to drive the exhaust portion lid. An axis of the exhaust opening coincides with a central axis of the processing chamber. The exhaust portion lid includes a circular plate portion and a protruding portion protruding from the circular plate portion toward the exhaust opening. The exhaust portion lid is driven by the actuator to be movable to various positions with respect to the exhaust opening and the base plate.

Plasma processing apparatus

A vacuum processing apparatus with improved processing efficiency, which includes a pusher arm to support the wafer on a beam portion, or deliver the supported wafer, and a cooling plate disposed on a bottom in the lock chamber for cooling the wafer and placed on tip ends of multiple support pins. The pusher arm includes four pusher pins disposed around a center of the wafer to be placed on the horizontally extending beam portion, and a drive unit connected to the proximal part for vertically moving the beam portion. The cooling plate includes a recess portion in its center, into which the beam portion of the pusher arm which has been moved downward is stored. The support pins are positioned closer to an outer circumference side of the wafer on the cooling plate with respect to the center than the pusher pins of the pusher arm.

Vacuum processing apparatus

A plasma processing apparatus or a plasma processing method having an improved yield, the plasma processing apparatus includes: a processing chamber arranged inside a vacuum container; a processing gas supply line connecting to the vacuum container, communicating with the processing chamber, and configured to supply processing gas having adhesiveness to the processing chamber; and a gas exhaust line for the processing gas connecting and communicating the processing gas supply line with a processing chamber exhaust line that is connected to an exhaust pump and communicates with the processing chamber, in which the plasma processing apparatus exhausts the processing gas in the processing gas supply line through the gas exhaust line and the processing chamber exhaust line in a state where supplying of the processing gas to the processing chamber is stopped between one processing step of etching the wafer and a subsequent processing step.

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Tokyo, Japan

Shengnan Yu