Xidian University

Shenglei Zhao

Yue Hao

Jincheng Zhang

Weihang Zhang

Junwei Liu

Kunlu Song

Zhihong Liu

Yachao Zhang

Lu Hao

Hong Zhou

A method for preparing an AlN based template having a Si substrate and a method for preparing a GaN based epitaxial structure having a Si substrate are provided. The method for preparing the AlN based template having the Si substrate, which includes: providing the Si substrate; growing an AlN nucleation layer on the Si substrate; and introducing an ion passing through the AlN nucleation layer and into the Si substrate. After the AlN nucleation layer is prepared on the Si substrate, the ions are introduced into the Si substrate and the AlN nucleation layer through the AlN nucleation layer. In this way, types of the introduced ions can be expanded. In addition, a carrier concentration at an interface between the Si substrate and the AlN nucleation layer and a carrier concentration in the AlN nucleation layer can also be reduced.

Methods for preparing AlN based template having Si substrate and GaN based epitaxial structure having Si substrate

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Xi'an, China

Shenglei Zhao