Peking University

Shenghu Tan

Ru Huang

Yue Pan

Yimao Cai

Yinglong Huang

Yu Jia Tang

Lijie Zhang

Xin Huang

Jun Mao

Poren Tang

Gengyu Yang

Shiqiang Qin

Systems and methods are disclosed involving a resistive memory with a small electrode, relating to the field of semiconductor resistive memory in ULSI. An illustrative resistive memory may include an Al electrode layer, a SiOlayer, a Si layer, a resistive material layer and a lower electrode layer in sequence, wherein the Al electrode layer and the resistive material layer are electrically connected through one or more conductive channel and the conductive channel is formed by penetrating Al material into the Si layer via defects in the SiOlayer and dissolving Si material into the Al material. Methods may include forming a lower electrode layer, a resistive layer, a Si layer and a SiOlayer over a substrate; fabricating a Al electrode layer over the SiOlayer; and performing an anneal process to the resultant structure. Consistent with innovations herein, a small electrode may be obtained via a conventional process.

Resistive memory with small electrode and method for fabricating the same

The present invention discloses a method for achieving four-bit storage by using a flash memory having a splitting trench gate. The flash memory with the splitting trench gate is disclosed in a Chinese patent No. 200710105964.2. At one side that each of two trenches is contacted with a channel, a programming for electrons is achieved by using a channel hot electron injection method; and at the other side that each of the two trenches is contacted with a source or a drain, a programming for electrons is achieved by using an FN injection method, so that a function of a four-bit storage of the device is achieved by changing a programming mode. Thus, a performance of the device is improved while a storage density is greatly increased.

Method for achieving four-bit storage using flash memory having splitting trench gate

The present invention discloses a multilevel resistive memory having large storage capacity, which belongs to a field of a fabrication technology of a resistive memory. The resistive memory includes an top electrode and a bottom electrode, and a combination of a plurality of switching layers and defective layers interposed between the top electrode and the bottom electrode, wherein, the top electrode and the bottom electrode are respectively contacted with a switching layer (a film such as TaO, TiO, HfO), and the defective layers (metal film such as Ti, Au, Ag) are interposed between the switching layers. By using the present invention, a storage capacity of a resistive memory can be increased.

Multilevel resistive memory having large storage capacity

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Beijing, China

Shenghu Tan