Texas Instruments Corporation

Sheng Zou

Hong Yang

Yunlong Liu

Yufei Xiong

Ho Lin

Peng Li

Qiuling Jia

Tianping Lv

Chao Zhuang

Tian Ping Lv

Qiu Ling Jia

Yuchen Li

Zhiyun Liu

Shuqian Huang

The present disclosure generally relates to determining a process condition in a semiconductor process using attribute-relative process conditions. An example is a method of forming an integrated circuit (IC). First and second historical process conditions are obtained. The first historical process conditions are of previous semiconductor processing corresponding to a target value of a process attribute for forming the IC, and the second historical process conditions are of previous semiconductor processing corresponding to variable values of the process attribute. Attribute-relative process conditions are calculated. Each attribute-relative process condition is based on the first historical process conditions and the second historical process conditions that correspond to a respective given value of the variable values. An average process condition is determined from a subset of the attribute-relative process conditions. A process condition of a subsequent semiconductor process is set based on the average process condition.

Process control system including process condition determination using attribute-relative process condition

A method of forming an IC including a power semiconductor device includes providing a substrate having an epi layer thereon with at least one transistor formed therein covered by a pre-metal dielectric (PMD) layer. Contact openings are etched from through the PMD into the epi layer to form a sinker trench extending to a first node of the device. A metal fill material is deposited to cover a sidewall and bottom of the sinker trench but not completely fill the sinker trench. A dielectric filler layer is deposited over the metal fill material to fill the sinker trench. An overburden region of the dielectric filler layer is removed stopping on a surface of the metal fill material in the overburden region to form a sinker contact. A patterned interconnect metal is formed providing a connection between the interconnect metal and metal fill material on the sidewall of the sinker trench.

Power MOSFET with metal filled deep sinker contact for CSP

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Chengdu, China

Sheng Zou