Taiwan Semiconductor Manufacturing Comp. Ltd.

Other

Tsinghua University

Sheng-Yuan Chang

Chung-Te Lin

Chien-Hua Huang

Han-Ting Lin

Chang-Lin Yang

Yun Chi

Pi-Tai Chou

Kai-Chieh Liang

Wei-De Ho

Yu-Tai Tao

Lan-Hsin Chiang

Yung-Yu Wang

Jakka Kavitha

Structures and formation methods of a semiconductor structure are provided. The semiconductor structure includes an insulating layer covering a device region and an alignment mark region of a semiconductor substrate. A conductive feature is formed in the insulating layer and corresponds to the device region. An alignment mark structure is formed in the first insulating layer and corresponds to the alignment mark region. The alignment mark structure includes a first conductive layer, a second conductive layer covering the first conductive layer, and a first magnetic tunnel junction (MTJ) stack layer covering the second conductive layer. The first conductive layer and the conductive feature are made of the same material.

Alignment mark for MRAM device and method

A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells. The metal components are then removed by chemical reaction. However, the removal of the metal components may form extra substances on the substrate. A further etching process is then performed to remove the extra substances by physical etching.

Method of fabricating magneto-resistive random access memory (MRAM)

A method for fabricating magnetoresistive random-access memory cells (MRAM) on a substrate is provided. The substrate is formed with a magnetic tunneling junction (MTJ) layer thereon. When the MTJ layer is etched to form the MRAM cells, there may be metal components deposited on a surface of the MRAM cells and between the MRAM cells by chemical reaction. The metal components are then removed by chemical reaction.

The present invention relates to a platinum complex as the following formula (I):  wherein X, n, R, R, R,R, R, X, X, L, and Lare defined the same as the specification. The present invention also further provides an organic light-emitting device using the same. The complexes of the present invention exhibit enhanced emission quantum yields, and short phosphorescence radiative lifetimes in the range of several microseconds so as to be applied in high efficiency OLEDs.

Platinum complex and organic light-emitting device using the same

A series of Pt(II) complexes having the following formula are disclosed:

Pt complexes as phosphorescent emitters in the fabrication of organic light emitting diodes

Growing community of inventors

Hsinchu, Taiwan

Sheng-Yuan Chang