Taiwan Semiconductor Manufacturing Comp. Ltd.

Sheng-Yu Chang

Chih-Hao Chang

Jen-Hsiang Lu

Chung-Ting Li

Jyun-Yang Shen

Chao-Cheng Chen

Ryan Chia-Jen Chen

Kuei-Shun Chen

Chia-Chu Liu

Hua Feng Chen

Chi-Kang Chang

Chih-Hsiung Peng

Chiang Mu-Chi

In a method of manufacturing a semiconductor device, a first fin structure for an n-channel fin field effect transistor (FinFET) is formed over a substrate. An isolation insulating layer is formed over the substrate such that an upper portion of the first fin structure protrudes from the isolation insulating layer. A gate structure is formed over a part of the upper portion of the first fin structure. A first source/drain (S/D) epitaxial layer is formed over the first fin structure not covered by the gate structure. A cap epitaxial layer is formed over the first S/D epitaxial layer. The first S/D epitaxial layer includes SiP, and the cap epitaxial layer includes SiC with a carbon concentration is in a range from 0.5 atomic % to 5 atomic %.

Semiconductor device and manufacturing method thereof

A method for fabricating a device is disclosed. An exemplary method includes providing a substrate and forming a plurality of fins over the substrate. The method further includes forming a first opening in the substrate in a first longitudinal direction. The method further includes forming a second opening in the substrate in a second longitudinal direction. The first and second longitudinal directions are different. The method further includes depositing a filling material in the first and second openings.

Method of forming a FinFET device

Growing community of inventors

Hsinchu, Taiwan

Sheng-Yu Chang