United Microelectronics Corp.

Sheng-Yi Su

Chun-Ling Lin

Ko-Wei Lin

Huei-Ru Tsai

Ying-Lien Chen

Hung-Miao Lin

Tzu-Hao Liu

An interconnect structure includes a dielectric layer and a conductor embedded in the dielectric layer. A top surface of the conductor is flush with a top surface of the dielectric layer. A cobalt cap layer is deposited on the top surface of the conductor. A nitrogen-doped cobalt layer is disposed on the cobalt cap layer.

Interconnect structure

Interconnect structure and fabrication method thereof

A method is provided for forming copper material over a substrate. The method includes forming a barrier layer over a substrate. Then, a depositing-soaking-treatment (DST) process is performed over the barrier layer. A copper layer is formed on the cobalt layer. The DST process includes depositing a cobalt layer on the barrier layer. Then, the cobalt layer is soaked with Hgas at a first pressure. The cobalt layer is treated with a Hplasma at a second pressure. The second pressure is lower than the first pressure.

Method for forming copper material over substrate

Growing community of inventors

Kaohsiung, Taiwan

Sheng-Yi Su