United Microelectronics Corp.

Mediatek Singapore Pte. Ltd.

Sheng-Yi Huang

Cheng-Chou Hung

Chih-Yu Tseng

Victor-Chiang Liang

Tzung-Lin Li

Jui-Meng Jao

Zheng Zeng

Cheng-Hung Li

Huai-Wen Zhang

Jen-Wei Ko

Chin-Lan Tseng

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate, an N-type well region over the semiconductor substrate, a FDSOI transistor formed over the N-type well region, a first shallow trench isolation (STI) region over the N-type well region, a first N-type doped region over the N-type well region, a second STI region over the semiconductor substrate, a first P-type doped region over the semiconductor substrate, and a first interconnection element over the first P-type doped region. The first P-type doped region is separated from the first N-type doped region by the second STI region. The first interconnection element is configured to connect the first P-type doped region to a ground. No interconnection element is formed over the first N-type doped region so that the first N-type doped region and the N-type well region are floating.

Semiconductor structure for fully depleted silicon-on-insulator (FDSOI) transistor

A radio frequency (RF) device that can achieve high frequency response while maintaining high output impedance and high breakdown voltage includes a substrate, a gate, at least a dummy gate, at least a doped region, a source region and a drain region. The substrate includes a well of first type and a well of second type. The well of second type is adjacent to the well of first type.

Radio frequency device and method for fabricating the same

A die seal ring disposed outside of a die region of a semiconductor substrate is disclosed. The die seal ring includes a first isolation structure, a second isolation structure, and at least one third isolation structure disposed between the first isolation structure and the second isolation structure; a plurality of first regions between the first isolation structure, the second isolation structure and the third isolation structure; a second region under the first region and the third isolation structure; and a third region under the first isolation structure.

Die seal ring

Growing community of inventors

Hsinchu, Taiwan

Sheng-Yi Huang