Texas Instruments Corporation

Nanjing Hydraulic Research Institute Under the Ministry of Water Resources, the Ministry of Transport and the Ministry of Electric

Chengdu Branch of Guodian Academy of Science and Technology Co., Ltd.

Sheng Yang

Tian Zhang

Qin Xu Yu

Jian Jun Kong

She Yu Tang

Fang Wang

Chen Chen

Gang Wu

Jun Li

Ming Zhang

Hua Fu

Hua Ling

Denghua Li

Limin Xiao

Yongyong Cao

Zhaosheng Zhang

Yingli Wu

Jingping Ming

Zehua Huangfu

Shilin Li

Qiming Zhong

Juhua Zhang

Jiefu Wu

Ruiji Yi

Hongxia Fan

Zhe Hu

Lifei Gong

Wanli Guo

Yufeng Huangfu

Jing Yuan

Ting Shen

Yong Li

Provided is an underwater repair system for a cavity region of a concrete panel rock-fill dam panel, including a moving platform, a work cabin, a pressure drainage apparatus, a traction apparatus, and a positioning apparatus; the traction apparatus controlling the movement of the moving platform on the surface of a dam concrete panel; the positioning apparatus transmits a detection position; the work cabin is a pressure cabin, the work cabin being connected to the pressure drainage apparatus, and a drill apparatus and grouting apparatus being arranged in the work cabin; the moving platform moves into the cavity region, and the pressure drainage apparatus starts up to drain the water in the work cabin, a partially closed waterless space being formed inside the work cabin, the drill apparatus drilling the concrete panel at the upper end of the cavity region and the grouting apparatus subsequently implementing grouting to complete the repair.

Underwater repair system for cavity region of concrete panel rock-fill dam panel

In some embodiments, a method of forming an integrated circuit includes providing a semiconductor substrate having an electronic circuit formed on a front side, and having a first material layer located over a second side of the substrate and a second material layer located between the first material layer and the second side. At least a portion of the first material layer is removed using a first chemical etching process, thereby exposing the second material layer. At least a portion of the second material layer is removed using a second chemical etching process. A portion of the substrate is then mechanically removed from the second side.

Etching and mechanical grinding film-layers stacked on a semiconductor substrate

In some embodiments, a method includes wet-etching a first film layer of a plurality of film layers stacked on a semiconductor substrate, the wet-etching of the first film layer performed using a first chemical, where the first film layer is an outermost film layer stacked on the semiconductor substrate. The method further includes wet-etching a second film layer of the plurality of film layers using a second chemical. The method also includes using a mechanical grinding wheel to grind the semiconductor substrate to reduce a thickness of the semiconductor substrate.

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Chengdu, China

Sheng Yang