Nan Ya Technology Corporation

Sheng Wei Yang

Ping Cheng Hsu

Ming Cheng Chang

Ying Cheng Chuang

Hung Ming Tsai

A method of fabricating a memory device includes forming a plurality of first insulative blocks and a plurality of second insulative blocks arranged in an alternating manner in a substrate, forming a plurality of wide trenches in the substrate to form a plurality of protruding blocks, forming a word line on each sidewall of the protruding blocks, isolating the word line on each sidewall of the protruding block, and forming an trench filler in the protruding block to form two mesa structures, wherein the first insulative block and the second insulative block have different depths, and the wide trenches are transverse to the first insulative blocks.

Method of fabricating memory device

A memory device includes a mesa structure and a word line. The mesa structure, having two opposite side surfaces, includes at least one pair of source/drain regions and at least one channel base region corresponding to the pair of source/drain regions formed therein. The word line includes two linear sections and at least one interconnecting portion. Each linear section extends on the respective side surface of the mesa structure, adjacent to the channel base region. The at least one interconnecting portion penetrates through the mesa structure, connecting the two linear sections.

Memory device and method of fabricating the same

A memory device includes a plurality of isolations and trench fillers arranged in an alternating manner in a direction, a plurality of mesa structures between the isolations and trench fillers, and a plurality of word lines each overlying a side surface of the respective mesa. In one embodiment of the present invention, the width measured in the direction of the trench filler is smaller than that of the isolation, each mesa structure includes at least one paired source/drain regions and at least one channel base region corresponding to the paired source/drain regions, and each of the word lines is on a side surface of the mesa structure, adjacent the respective isolation, and is arranged adjacent the channel base region.

Growing community of inventors

Taoyuan County, Taiwan

Sheng Wei Yang