Dyna Image Corporation

Sheng-Ti Lee

Chien-I Fu

Chi-Ting Shen

Chao-Jung Chen

Wei-Jung Chen

Chien-Chou Huang

Chi-Fin Chen

Yong-Song Tsai

A sensor device has a field oxide layer deposited over a substrate. The field oxide layer has opposing sharp edges that define a window. A sensor is formed in the window with a distance between the sensor and each sharp edge that defines the window. The distance forms a gap that reduces the effects of the sharp edges on the sensor, thereby reducing the current leakage from the sensor. In addition, a protective layer may be disposed over the distance and the sharp edges of the field oxide layer to further protect the sharp edges from damage that may be caused from further processing.

CMOS sensor having a structure to reduce white pixels

A contact image sensor is provided with a modified photodevice module and method of operation. The photodevice modules convert the video signals created by the sensed lights from an electrical charge to electrical voltage immediately upon stimulation of the photodevice, and hold the electrical voltage at another element in the photodevice module so that the voltage can be immediately output when the shift register output switch is turned on. A dark current elimination circuit is also provided and includes a light-shielded photodevice which produces a dark current reference signal representative of the expected dark current in the photodevices of the photodevice modules. This dark current reference signal is used to adjust the electrical charge created by the light stimulation of the photodevice.

High performance contact image sensor

Growing community of inventors

Taipei, Taiwan

Sheng-Ti Lee