Industrial Technology Research Institute

Sheng-Min Yu

Yi-Fan Chen

Wen-Ching Sun

Yan-Rung Lin

Pei-Wen Yen

Tzer-Shen Lin

Kai-Ping Chuang

Chien-Chung Hsu

Ming-Hui Chang

Tai-Jui Wang

Kai-Hsiang Chuang

Tzu-Yu Liu

Hsueh-Ping Weng

Hsiu-Hsia Lee

Sheng-Yi Chiu

Pin-Guan Liao

Chi-Fan Chiang

Chia-Liang Sun

Hao-Hsiang Chiang

A precursor structure is provided. The precursor structure has the following chemical formula: wherein M is a trivalent ion or a pentavalent ion, M' is a bivalent ion, x=0-1, y=0-1.5, and the precursor structure includes a pyrochlore phase. Since the pyrochlore phase may be transformed into the garnet phase through a lithiation process and the phase transition temperature is lower (e.g., 500-1000&#xb0; C.), the precursor structure may be co-fired with the cathode material (e.g., lithium cobalt oxide (LiCoO)) to form a thin lamination structure. That is, the thickness of the solid electrolyte may be effectively reduced, thereby improving the ionic conductivity of the solid electrolyte ion battery.

Precursor structure, lamination film of the same, and manufacturing method of ion-conducting layer using the same

A method of removing fluoride ion from waste liquid is provided, which includes providing a calcium source and a plurality of ceramic particles to a waste liquid containing fluoride ion for forming a plurality of calcium fluoride layers wrapping the ceramic particles. The calcium fluoride layers are connected to form a calcium fluoride bulk. The ceramic particles are embedded in the calcium fluoride bulk. The ceramic particles and the calcium fluoride bulk have a weight ratio of 1:4 to 1:20.

Composite material and method of removing fluoride ion in waste liquid

A porous material including a composite oxide body containing calcium oxide, iron oxide, and silica, and a plurality of inter-connecting microchannel structures is provided. A preparing method of porous material is further provided. With the inter-connecting microchannel structures of the porous material and the advantages of high porosity and large specific surface area, the porous material has a bright prospect in the fields of catalysts, filters, adsorption materials, and fuel carriers.

Porous material and method for preparing the same

A ceramic composite and a method of preparing the same are provided. The method of preparing the ceramic composite includes mixing an aluminum slag and a carbon accelerator to obtain a mixture and reacting the mixture at a temperature equal to or greater than 1600&#xb0; C. in a nitrogen atmosphere to obtain a ceramic composite. The aluminum slag includes aluminum, oxygen, nitrogen, and magnesium. The weight ratio of the oxygen to the aluminum is 0.6 to 2. The weight ratio of the nitrogen to the aluminum is 0.1 to 1.2. The weight ratio of the magnesium to the aluminum is 0.04 to 0.2. The ceramic composite includes aluminum nitride accounting for at least 90 wt % of the ceramic composite.

Ceramic composite and method of preparing the same

A method of forming a core-shell composite material includes depositing a polysiloxane shell to wrap a ceramic core via chemical vapor deposition for forming a core-shell composite material, wherein the ceramic core is an oxide of metal and silicon, which includes 100 parts by weight of calcium, 50 to 95 parts by weight of iron, 15 to 40 parts by weight of silicon, 2 to 15 parts by weight of magnesium, 2 to 20 parts by weight of aluminum, and 2 to 10 parts by weight of manganese.

Core-shell composite material and method for manufacturing the same

An image sensor and a manufacturing method thereof are provided. The image sensor includes a substrate, a patterned electrode layer, a pixel isolation structure and a patterned photo-electric conversion layer. The patterned electrode layer is disposed on the substrate and includes a plurality of electrode blocks separated from one another. The pixel isolation structure is disposed on the substrate and includes a metal halide. The patterned photo-electric conversion layer is disposed on the electrode blocks to form a plurality of photo-electric conversion blocks corresponding to the electrode blocks. The photo-electric conversion blocks include a perovskite material. The photo-electric conversion blocks are separated from one another by the pixel isolation structure.

Image sensor and manufacturing method thereof

An image sensor and a manufacturing method thereof are provided. The image sensor includes a pixel sensing circuit, a pixel electrode, and an opto-electrical conversion layer. The pixel sensing circuit is corresponding to a plurality of pixel regions. The pixel electrode is disposed on the pixel sensing circuit. The pixel electrode includes a first electrode and a second electrode and is electrically connected to the pixel sensing circuit. The first electrode and the second electrode are coplanar, and have different polarities. The opto-electrical conversion layer is disposed on the pixel sensing circuit. The opto-electrical conversion layer includes a plurality of opto-electrical conversion portions, each of the opto-electrical conversion portions is corresponding to each of the pixel regions, and the opto-electrical conversion portions are separated from each other by a pixel isolation trench.

Image sensor

A method for forming doping regions is disclosed, including providing a substrate, forming a first-type doping material on the substrate and forming a second-type doping material on the substrate, wherein the first-type doping material is separated from the second-type doping material by a gap; forming a covering layer to cover the substrate, the first-type doping material and the second-type doping material; and performing a thermal diffusion process to diffuse the first-type doping material and the second-type doping material into the substrate.

Method for forming patterned doping regions

A passivation layer structure of a semiconductor device is provided, which includes a passivation layer formed of halogen-doped aluminum oxide and disposed on a semiconductor layer on a substrate, in which the semiconductor layer includes indium gallium zinc oxide (IGZO) or nitride-based III-V compounds. A method for forming the passivation layer structure of a semiconductor device is also disclosed.

Passivation layer structure of semiconductor device and method for forming the same

According to an embodiment of the invention, a passivation layer structure of a semiconductor device disposed on a semiconductor substrate is provided, which includes a passivation layer structure disposed on the semiconductor substrate, wherein the passivation layer structure includes a halogen-doped aluminum oxide layer. According to an embodiment of the invention, a method for forming a passivation structure of a semiconductor device is provided.

Growing community of inventors

Taoyuan, Taiwan

Sheng-Min Yu