Applied Materials, Inc.

Sheng Michael Guo

Yuanhong Guo

Yuji Murayama

Marek W Radko

Pingping Gou

Jeffrey C Hudgens

Xiaoxiong Yuan

Steven Victor Sansoni

Michael C Kuchar

Song-Moon Suh

See-Eng Phan

Steve Sansoni

Matvey Farber

Shaofeng Chen

Anurag Bansal

Nagendra Madiwal

Xi Chelsea Chen

Thomas B Brezoczky

Cheng-Hsiung Matt Tsai

Chi Hong Ching

Shreesha Y Rao

A method of cleaning a chamber for an electronics manufacturing system includes flowing a gas mixture comprising oxygen and a carrier gas into a remote plasma generator. The method further includes generating a plasma from the gas mixture by the remote plasma generator and performing a remote plasma cleaning of the chamber by flowing the plasma into an interior of the chamber, wherein the plasma removes a plurality of organic contaminants from the chamber.

Remote plasma cleaning of chambers for electronics manufacturing systems

A method includes machining a raw surface of a metal component to remove first native oxide from a metal base of the metal component to generate an as-machined surface of the metal component. A second native oxide is formed on the metal base of the as-machined surface of the metal component subsequent to the machining. The method further includes, subsequent to the machining, performing operations to generate a finished surface of the metal component. The operations include a surface machining of the as-machined surface of the metal component to remove the second native oxide.

Organic contamination free surface machining

Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.

Reactive cleaning of substrate support

A method includes receiving a metal component including a raw surface that includes a metal base, a first native oxide disposed on the metal base, and hydrocarbons disposed on the metal base. The method further includes machining the raw surface of the metal component to remove the first native oxide and a first portion of the hydrocarbons from the metal base. The machining generates an as-machined surface of the metal component including the metal base without the first native oxide and without the first portion of the hydrocarbons. The method further includes performing a surface machining of the as-machined surface of the metal component to remove a second portion of the hydrocarbons. The method further includes surface treating the metal component to remove a third portion of the hydrocarbons. The method further includes performing a cleaning of the metal component and drying the metal component.

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San Mateo, CA, United States of America

Sheng Michael Guo