United Microelectronics Corp.

Sheng-Lung Chen

Da-Shuang Kuan

Yi-Cheng Lan

Sheng-Hsing Yang

The invention provides an apparatus and a method for rubbing the alignment layer in the LCD substrate. The rubbing apparatus of the present invention further includes a conditioning roller, in addition to the rubbing roller, to rejuvenate the rubbing roller in real time so as to lengthen the roller lifetime in the rubbing process and increase the rubbing rate. By employing the conditioning roller along with the rubbing roller, the rubbing process includes an extra conditioning step for conditioning the rubbing roller, thus shortening the production cycle time and increasing the throughput.

Method for rubbing LCD substrate

The invention provides an apparatus and a method for rubbing the alignment layer in the LCD substrate. The rubbing apparatus of the present invention further includes a second rolling apparatus for conditioning, in addition to the first rolling apparatus for rubbing, to rejuvenate the first rolling apparatus in real time so as to lengthen the lifetime of the rolling apparatus in the rubbing process and increase the rubbing rate. By employing the second rolling apparatus along with the first rolling apparatus, the rubbing process includes an extra conditioning step for conditioning the first rolling apparatus, thus shortening the production cycle time and increasing the throughput.

Apparatus and method for rubbing LCD substrate

The present invention provides a manufacturing method for a microdisplay. After providing a wafer with a plurality of pixel structures on the front side, trenches with a pattern are formed on the backside of the wafer. A transparent plate is disposed above the front side of the wafer and a sealant is applied to join the wafer and the transparent plate. After cutting the wafer and the transparent plate into display cells of suitable sizes, liquid crystal is then introduced in-between the sealant of the display cells.

Manufacturing method for microdisplay

The invention describes a method of fabricating the integration of high-voltage devices and low-voltage devices. The ion implantation steps for forming the isolation doping regions and the drafting doping regions in the high-voltage device are used to form simultaneously the anti-punch-through regions in the low-voltage device. The production of the integrated circuit is then finished with other process steps.

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Hsinchu, Taiwan

Sheng-Lung Chen