Rohm & Haas Electronic Materials LLC

Dupont Electronic Materials International, LLC

Sheng Liu

James F Cameron

Shintaro Yamada

Li Cui

Suzanne M Coley

Iou-Sheng Ke

Keren Zhang

Joshua A Kaitz

Paul J LaBeaume

Deyan Wang

Daniel Greene

Mingqi Li

Cong Liu

Emad Aqad

Jong Keun Park

Christopher D Gilmore

Tsutomu Asazuma

Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Aromatic underlayer

An underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic Caromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; X is C or O; R, R; Rand Rare as provided herein; optionally, Rand Rcan be taken together form a 5- to 7-membered ring; optionally, one of Rto Rcan be taken together with Rto form a 5- to 7-membered ring; wherein Rand Roptionally may be taken together to form a 5- to 7-membered ring; wherein one of Ror Roptionally may be taken together with Rto form a 5- to 7-membered ring; and when X is O, Rand Rare absent.

Underlayer compositions and patterning methods

A photoresist composition comprising a polymer, a photoacid generator, an additive comprising a tertiary carbon atom as a ring-forming atom of a lactone ring, and a solvent.

Photoresist compositions and pattern formation methods

Coating compositions comprise: a curable compound comprising: a core chosen from a Ccarbocyclic aromatic ring, a Cheterocyclic aromatic ring, a Cfused carbocyclic aromatic ring system, a Cfused heterocyclic aromatic ring system, Caliphatic, and Ccycloaliphatic, and three or more substituents of formula (1) wherein at least two substituents of formula (1) are attached to the aromatic core; provided that no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; a polymer; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition.

Coating compositions and methods of forming electronic devices

Coating compositions comprise: a B-staged reaction product of one or more compounds comprising: a core chosen from Ccarbocyclic aromatic, Cheterocyclic aromatic, Caliphatic, Cheteroaliphatic, Ccycloaliphatic, and Cheterocycloaliphatic, each of which may be substituted or unsubstituted; and two or more substituents of formula (1) attached to the core: wherein: Aris an aromatic group independently chosen from Ccarbocyclic aromatic and Cheteroaromatic, each of which may be substituted or unsubstituted; Z is a substituent independently chosen from OR, protected hydroxyl, carboxyl, protected carboxyl, SR, protected thiol, &#x2014;O&#x2014;C(&#x2550;O)&#x2014;Calkyl, halogen, and NHR; wherein each Ris independently chosen from H, Calkyl, Cunsaturated hydrocarbyl, and Caryl; each Ris independently chosen from H, Calkyl, Cunsaturated hydrocarbyl, Caryl, C(&#x2550;O)&#x2014;R, and S(&#x2550;O)&#x2014;R; x is an integer from 1 to the total number of available aromatic ring atoms in Ar; and * denotes the point of attachment to the core; provided that when the core comprises an aromatic ring, no substituents of formula (1) are in an ortho position to each other on the same aromatic ring of the core; and one or more solvents, wherein the total solvent content is from 50 to 99 wt % based on the coating composition. Coated substrates formed with the coating compositions and methods of forming electronic devices using the compositions are also provided. The compositions, coated substrates and methods find particular applicability in the manufacture of semiconductor devices.

A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic Caromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; Ris hydrogen, substituted or unsubstituted Calkyl, substituted or unsubstituted Cheteroalkyl, substituted or unsubstituted Ccycloalkyl, substituted or unsubstituted Cheterocycloalkyl, substituted or unsubstituted Calkenyl, substituted or unsubstituted Calkynyl, substituted or unsubstituted Caryl, substituted or unsubstituted Carylalkyl, substituted or unsubstituted Calkylaryl, substituted or unsubstituted Cheteroaryl, or substituted or unsubstituted Cheteroarylalkyl; and Ris substituted or unsubstituted Calkyl, substituted or unsubstituted Cheteroalkyl, substituted or unsubstituted Ccycloalkyl, substituted or unsubstituted Cheterocycloalkyl, substituted or unsubstituted Calkenyl, substituted or unsubstituted Calkynyl, substituted or unsubstituted Caryl, substituted or unsubstituted Carylalkyl, substituted or unsubstituted Calkylaryl, substituted or unsubstituted Cheteroaryl, or substituted or unsubstituted Cheteroarylalkyl, wherein Rand Rcan be optionally taken together to form a ring.

Coating composition for photoresist underlayer

There is provided a curable composition for forming an anti-reflective film. The composition includes: (a) hollow silica nanoparticles; (b) a siloxane binder having reactive groups; (c) at least one additional material having reactive groups; (d) an initiator; and (e) solvent. The siloxane binder is present in an amount that is at least 50% by weight of the total weight of (siloxane binder+additional materials having reactive groups). The weight ratio of hollow silica nanoparticles to the total of (siloxane binder+additional materials having reactive groups) is no greater than 1.75 to 1.

Anti-reflective coating

Polyarylene resins and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

Aromatic resins for underlayers

Curable homopolymers formed from monomers having two 2-naphthol moieties are useful as underlayers in semiconductor manufacturing processes.

Aromatic resin polymers and compositions containing them are useful as underlayers in semiconductor manufacturing processes.

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Bow, NH, United States of America

Sheng Liu