Peking University

J-metrics Technology Co., Ltd.

Sonicmems (zhengzhou) Technology Co., Ltd.

Sheng-Lin Ma

Yi-Hsiang Chiu

Yu-Feng Jin

Dan Gong

Huan Liu

Hung-Ping Lee

Qian-Cheng Zhao

A wafer level ultrasonic chip module includes a substrate, a composite layer, a conducting material, and a base material. The substrate has a through slot that passes through an upper surface of the substrate and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The protective layer has an opening, from which a partial upper surface of the ultrasonic body is exposed. The conducting material is in contact with the upper surface of the ultrasonic body. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Wafer level ultrasonic chip module and manufacturing method thereof

A wafer level ultrasonic chip module includes a substrate, a composite layer and a base material. The substrate has a through slot passing through an upper surface and a lower surface of the substrate. The composite layer includes an ultrasonic body and a protective layer. A lower surface of the ultrasonic body is exposed from the through slot. The protective layer covers the ultrasonic body and a partial upper surface of the substrate. The composite layer has a groove passing through an upper surface and a lower surface of the protective layer, and communicating with the through slot. The ultrasonic body corresponds to the through slot. The base material covers the through slot, such that a space is formed among the through slot, the lower surface of the ultrasonic body and an upper surface of the base material.

Wafer level ultrasonic chip module having suspension structure and manufacturing method thereof

A wafer scale ultrasonic sensor assembly includes a wafer substrate, an ultrasonic element, first and second protective layers, conductive wires, a transmitting material, an ASIC, a conductive bump, and a soldering portion. The wafer substrate includes a via. The ultrasonic element is exposed to the via. The conductive wires are on the first protective layer and connected to the ultrasonic element. The second protective layer covers the conductive wires, and the second protective layer has an opening corresponding to the ultrasonic element. The transmitting material contacts the ultrasonic element. The ASIC is connected to the wafer substrate, so that the via forms a space between the ASIC and the ultrasonic element. The conductive pillar is in a via defined through the ASIC, the wafer substrate, and the first protective layer, and the conducive pillar is respectively connected to the conductive wires and the soldering portion.

Wafer scale ultrasonic sensor assembly and method for manufacturing the same

An integrated package method for MEMS element and ASIC chip includes forming a re-layout layer on a front surface of an ASIC wafer; coating an organic compound layer on the re-layout layer and applying a lithography process to the organic compound layer to from a microcavity array; aligning and bonding an electrode connection pad layer on a front surface of an MEMS element with the microcavity array to form a closed cavity structure; thinning and exposing a silicon substrate on a back surface of the MEMS element to a desired thickness; applying the lithographic process on the MEMS element to expose the electrode connection pad layer and an electrical contact area of the re-layout layer; and manufacturing a metal connection member connected to the electrode connection pad layer and the electrical contact area. An integrated package structure for MEMS element and ASIC chip is also provided.

Integrated package structure for MEMS element and ASIC chip and method for manufacturing the same

A wafer scale ultrasonic sensing device includes a substrate assembly, an ultrasonic component, a first protective layer, a first conductive circuit, a second conductive circuit, a second protective layer, a conductive material, electrical connection layers, and soldering portions. The substrate assembly includes a first wafer and a second wafer, and the second wafer covers a groove on the first wafer to define a hollow chamber. The first wafer, the second wafer, and the first protective layer are coplanar with the first conductive circuit on a first side surface and coplanar with the second conductive circuit on a second side surface. The second protective layer has an opening, where the conductive material is in the opening and is in contact with the ultrasonic component. The electrical connection layers are on the first side surface and the second side surface, and the soldering portions are respectively connected to the electrical connection layers.

Wafer scale ultrasonic sensing device and manufacturing method thereof

An ultrasonic module and a manufacturing method for ultrasonic module are provided. The ultrasonic module includes a substrate, a composite layer, and a covering layer. The substrate has an upper surface. The composite layer has a top surface, a bottom surface, and a recessed surface recessed toward the bottom surface. The bottom surface is on the upper surface of the substrate. One or more space is formed between the recessed surface and the upper surface. The composite layer has one or more first groove extending from the top surface toward the recessed surface. The first groove separates the composite layer into a circuit structure and an ultrasonic structure connected to the circuit structure. The covering layer is assembled on the top surface of the composite layer.

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Shenzhen, China

Sheng-Lin Ma