Southeast University

Globe (jiangsu) Co., Ltd.

Csmc Technologies Fab2 Co., Ltd.

Nanjing Lopu Technology Co., Ltd.

Nanjing Lopu Co., Ltd.

Changzhou Globe Co., Ltd.

Sunrise Global Marketing LLC

Sheng Li

Longxing Shi

Weifeng Sun

Siyang Liu

Chi Zhang

Johan Örtlund

Jianlong Chen

Jie Kuang

Shengli Lu

Kui Xiao

Jiaxing Wei

Shidong Ma

Chris Eichel

Lingling Jiang

Chengbing Guo

Xinyi Tao

Jens Näslund

Ningbo Li

Bin Zhu

Dejin Wang

Nick Suchoza

Lili Ji

Feng Lin

Ning Xu

Andreas Carlsson

Lizhi Tang

Emma Ekberg

Yicheng Li

Rongcheng Lou

Yanfeng Ma

Mengli Liu

Xiuwei Lv

Deyu Han

Yezhuang Xu

The present disclosure relates to the technical field of display screen, and provides a display module set and a display screen. The display module set comprises a cabinet frame and a plurality of display modules. The cabinet frame comprises a power box and a plurality of sub-frames located on the left and right sides of the power box. The sub-frames on each side are arranged sequentially in a vertical direction. The plurality of the display modules corresponds to a plurality of the sub-frames on a one-to-one basis. A drive circuit and mounting members of the display module are both provided on a left side and/or right side region. A middle region of the display module is uniformly distributed with a hole structure for sound transmission. The display module is mounted on a corresponding sub-frame via the mounting members of the left side and/or right side region.

Display module set and display screen

A power semiconductor device includes: a substrate; drain metal; a drift region; a base region; a gate structure; a first conductive type doped region contacting the base region on the side of the base region distant from the gate structure; a source region provided in the base region and between the first conductive type doped region and the gate structure; contact metal that is provided on the first conductive type doped region and forms a contact barrier having rectifying characteristics together with the first conductive type doped region below; and source metal wrapping the contact metal and contacting the source region.

Power semiconductor device and manufacturing method therefor

A display screen cover is arranged to correspond to an area array driving plate of a display screen, and the display screen cover includes a cover body and a polarization film assembly. The polarization film assembly is arranged on the back of the cover body, and the polarization film assembly is provided with polarization film through holes and polarization film sound transmission spaces. The polarization film through holes are arranged to correspond to light-emitting tubes of the area array driving plate, and the polarization film sound transmission spaces are arranged to correspond to sound transmission spaces of the area array driving plate. The cover body is provided with cover through holes and cover sound transmission spaces. The cover through holes are arranged to correspond to the polarization film through holes, and the cover sound transmission spaces are arranged to correspond to the polarization film sound transmission spaces.

Display screen cover and display screen

A GaN power semiconductor device integrated with a self-feedback gate control structure comprises a substrate, a buffer layer, a channel layer and a barrier layer. A gate control area is formed by a first metal source electrode, a first P-type GaN cap layer, a first metal gate electrode, a first metal drain electrode, a second P-type GaN cap layer and a second metal gate electrode. An active working area is formed by the first metal source electrode, a third P-type GaN cap layer, a third metal gate electrode, a second metal drain electrode, the second P-type GaN cap layer and a second metal source electrode. The overall gate leaking current of the device is regulated by the gate control area, the integration level is high, the parasitic effect is small, and the charge-storage effect can be effectively relieved, thus improving the threshold stability of the device.

GaN power semiconductor device integrated with self-feedback gate control structure

Snow removal shovel

Snow thrower

A gallium nitride power device, including: a gallium nitride substrate; cathodes; a plurality of gallium nitride protruding structures arranged on the gallium nitride substrate and between the cathodes, a groove is formed between adjacent gallium nitride protruding structures; an electron transport layer, covering a top portion and side surfaces of each of the gallium nitride protruding structures; a gallium nitride layer, arranged on the electron transport layer and filling each of the grooves; a plurality of second conductivity type regions, where each of the second conductivity type regions extends downward from a top portion of the gallium nitride layer into one of the grooves, and the top portion of each of the gallium nitride protruding structures is higher than a bottom portion of each of the second conductivity type regions; and an anode, arranged on the gallium nitride layer and the second conductivity type regions.

Gallium nitride power device and manufacturing method thereof

A heterojunction semiconductor device comprises a substrate; a second barrier layer is disposed on the second channel layer and a second channel is formed; a trench gate structure is disposed in the second barrier layer; the trench gate structure is embedded into the second barrier layer and is composed of a gate medium and a gate metal located in the gate medium; an isolation layer is disposed in the second channel layer and separates the second channel layer into an upper layer and a lower layer; a first barrier layer is disposed between the lower layer of the second channel layer and the first channel layer and a first channel is formed; a bottom of the metal drain is flush with a bottom of the first barrier layer; and a first metal source is disposed between the second metal source and the first channel layer.

Heterojunction semiconductor device having high blocking capability

Robotic mower

The invention provides a graphene channel silicon carbide power semiconductor transistor, and its cellular structure thereof. Characterized in that, a graphene strip serving as a channel is embedded in a surface of the P-type body region and two ends of the graphene strip are respectively contacted with a boundary between the N+-type source region and the P-type body region and a boundary between the P-type body region and the N-type drift region, and the graphene strip is distributed in a cellular manner in a gate width direction, a conducting channel of a device is still made of graphene; in the case of maintaining basically invariable on-resistance and current transmission capacity, the P-type body regions are separated by the graphene strip, thus enhancing a function of assisting depletion, which further reduces an overall off-state leakage current of the device, and improves a breakdown voltage.

Graphene channel silicon carbide power semiconductor transistor

House for robotic mower

Lawnmower powerhead

Handle assembly

Growing community of inventors

Jiangsu, China

Sheng Li