Realtek Semiconductor Inc.

Sheng-Hung Lin

Kai-Yi Huang

Hsiao-Tsung Yen

Ta-Hsun Yeh

Yuh-Sheng Jean

Han-Chang Kang

A patterned ground shield device includes a first patterned ground shield layer and a second patterned ground shield layer. The first patterned ground shield layer is located on a first layer, and the second patterned ground shield layer is located on a second layer. The first patterned ground shield layer includes a plurality of first strip-shaped structures, and each of the first strip-shaped structures includes an oxide diffusion material. The second patterned ground shield layer includes a plurality of second strip-shaped structures, and each of the second strip-shaped structures includes a conductive material, wherein the first strip-shaped structures and the second strip-shaped structures are disposed to each other in an interlaced manner.

Patterned ground shield device including multiple pattered ground shield layers

An integrated circuit structure includes a substrate, an integrated inductor, multiple components, multiple metal interconnections, a first shielding structure, and a second shielding structure. The integrated inductor is substantially formed in a first layer of the integrated circuit structure. The metal interconnections are coupled to the integrated inductor and the components. The first shielding structure is formed between the first layer and the substrate and is substantially beneath the integrated inductor. The second shielding structure is formed between the first layer and the substrate, has substantially the same distribution as the metal interconnections, and is substantially beneath the metal interconnections. The first shielding structure and the second shielding structure are equipotential.

Integrated circuit structure, voltage-controlled oscillator and power amplifier

A stacked capacitor structure includes a MOS varactor and a stacked capacitor. The stacked capacitor is electrically connected to the MOS varactor. The MOS varactor includes a substrate, a gate, a first source/drain and a second source/drain. The substrate has a well, and the gate is positioned over the well. The first source/drain and the second source/drain are formed in the well and positioned at opposing sides of the gate. The stacked capacitor includes a plurality of metal layers. The metal layers are spaced from each other, stacked above the gate, and positioned below an inductive element.

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Taipei, Taiwan

Sheng-Hung Lin