Taiwan Semiconductor Manufacturing Comp. Ltd.

Merry Electronics (shenzhen) Co., Ltd.

Prophestor Data Services, Inc.

Sheng Hsiung Chen

Hung-Chi Lin

Mao-Hung Lin

Meng-Wei Lin

Ming-Hsing Tsai

Tsu Shih

Ming Hsien Tsai

Minghsing Tsai

Wen Shyen Chen

Hung-Yu Chen

Hungtse Lin

Shun Long Chen

Hao-Jun Zhang

Bernard Jay Wu

Frank Hsu

Tsu Shi

The application provides an information dissemination system including a first electronic device and a router. The first electronic device receives a first sound signal and recognizes the first sound signal according to a speech recognition algorithm to generate a first address information and a first coded information content. The router is connected to a local area network to receive the first encoded information content and semantically parse the first encoded information content to produce a parsed result. The router sends the parsed result over local area network. The router determines whether the first address indicated by the first address information is in the local area network according to the first address information, so as to send the parsed result to at least a second electronic device corresponding to the first address.

Information dissemination system and method thereof

A wearable device and a power saving method are proposed. The wearable device includes a sensor and a first processing unit. The sensor has a buffer. The first processing unit is coupled to the sensor. The first processing unit in a first hibernate mode is woken up after receiving a first signal, wherein the first processing unit includes an interrupting module. The interrupting module makes the first processing unit enter the first hibernate mode after commands, in response to the first signal, the sensor to start sensing so as to generate sense data, wherein the sensor wakes up the first processing unit from the first hibernate mode based on an amount of the sense data exceeding a threshold of the buffer, and the first processing unit enters the first hibernate mode after processing the sense data.

Wearable device and power saving method for wearable device

A headset including a speaker, a motion sensor, a transceiver, and a processor is provided. The speaker plays audio data. The motion sensor senses a posture of a user to generate first sensing data. The transceiver performs data transmission with an external device. The processor is coupled to the motion sensor and the transceiver. The processor determines whether the posture is correct according to the first sensing data to generate an output result and transmits the output result through the transceiver.

Headset with motion sensor

A method for generating label data is provided, and the method includes the following steps: sensing a posture of a user to generate a non-depth image; sensing the posture of the user to generate a depth image; sensing the posture of the user to generate motion data; and generating an identifying result of the posture according to the non-depth image and the depth image and labeling the motion data according to the identification result to generate label data.

System and method for generating label data

A system for achieving non-interruptive data reconstruction is disclosed. The system includes a source storage, a target storage, a server, a traffic modeling unit and at least one data moving service unit. With the help of traffic modeling unit, a period of time of low access can be estimated. Data reconstruction (copying or moving) can be carried on during the period of time. Thus, non-interruptive data reconstruction can be done.

System for achieving non-interruptive data reconstruction

A new processing sequence is provided for the creation of a metal gate electrode. At least two polysilicon gate electrodes are provided over the surface of a substrate, these polysilicon gate electrodes having a relatively thick layer of gate dielectric making these polysilicon gate electrodes suitable for high-voltage applications. The two polysilicon gate electrodes are divided into a first and a second gate electrode, both gate electrodes are imbedded in a layer of Intra Metal Dielectric (IMD). The first gate electrode is removed by applying a lift-off process to this first gate electrode, creating an opening in the layer of IMD. The second gate structure is shielded by a photoresist mask during the removal of the first gate electrode. A metal gate electrode is created in the opening created in the layer of IMD, using a thin layer of gate dielectric.

Selective formation of metal gate for dual gate oxide application

A process for forming a dual damascene opening, in a composite layer comprised with low k layers, to accommodate a dual damascene type, copper structure, has been developed. The process features the use of a silicon oxide layer, formed on the surfaces of the composite layer, exposed in the narrow diameter, via hole component of the dual damascene opening. The silicon oxide layer prevents via poisoning, or outgassing of amines or hydroxyls from the low k layers exposed in the via hole opening, that can evolve during a subsequent photolithographic development cycle, used to define the trench shape component of the dual damascene opening. The protective silicon oxide layer is conformally formed on the exposed-surfaces of the via hole component, via a liquid phase deposition procedure, performed at room temperature.

Liquid phase deposition of a silicon oxide layer for use as a liner on the surface of a dual damascene opening in a low dielectric constant layer

As current densities through wiring in integrated circuits increases, so too do failures due to electromigration. Such failure almost always occur in vias located at the ends of long lines. The present invention solves this problem by introducing, as part of the wiring, local back-diffusion sources that serve to increase back pressure on the metallic ions that makes up the wire, thereby reversing the trend towards electromigration. These sources are located close to the vias in question and may take the form of discrete local areas where the wiring is wider or they may be introduced in the form of dummy vias.

Reduction of electromigration in dual damascene connector

This invention describes two new methods to form copper alloy films. In the first embodiment of this invention physical vapor deposition (PVD) or sputtering of a copper alloy film, is then followed by a chemical vapor deposition (CVD) or electro-chemical deposition (ECD) of a layer of pure copper. In the second embodiment of this invention chemical vapor deposition (CVD) or electro-chemical deposition (ECD) deposits a layer of pure copper, which is then followed by physical vapor deposition (PVD) or sputtering of a copper alloy film. In yet another embodiment to these methods, special, separate low temperature annealing steps follow said methods to enhance copper alloy formation. By the two deposition techniques briefly described above, high aspect ratio vias and trenches can be filled with copper corrosion and electromigration resistant alloys.

Method of doping copper metallization

A novel and improved method of fabricating an integrated circuit, in which special copper films are formed by a combination of physical vapor deposition (PVD), chemical mechanical polish (CMP) and electrochemical copper deposition (ECD) techniques. The methods of the present invention make efficient use of several process steps resulting in less processing time, lower costs and higher device reliability. By these techniques, high aspect ratio trenches can be filled with copper without the problem of dishing. A special, selective electrochemical deposition (ECD) of copper metal is utilized taking place only on the seed layer in the trench. This auto-plating or &ldquo;plate-up&rdquo; occurs only in the trench and provides good sealing around the trench perimeter and fine copper metal coverage of the trench for subsequent robust interconnects. The selective plating of copper provides a robust copper film that is easily removed by subsequent chemical mechanical polish (CMP) and tends to be more uniform and free of the usual defects associated with CMP films.

Growing community of inventors

Taichung County, Taiwan

Sheng Hsiung Chen