Other

Tpo Displays Corporation

Toppoly Optoelectronics Corporation

Sheng-Chieh Yang

Ming-Dou Ker

An Shih

Tang-Kui Tseng

Chih-Kang Deng

Ying-Hsin Li

An ESD protection device with thicker polysilicon film, an electronic apparatus having the same, and a method for manufacturing the same are provided. The ESD protection device can be a diode or a MOS transistor with a thicker polysilicon film employed in an ESD protection circuit to protect an electronic apparatus. The electronic apparatus includes a substrate having a device area and an ESD protection circuit area. A first polysilicon film of a first thickness is formed on the device area of the substrate, so as to form an electronic device. A second polysilicon film of a second thickness is formed on the ESD protection circuit area, so as to form an ESD protection device. The second thickness, which is preferably about in the range of 100 to 500 nanometers, is thicker than the first thickness.

Method of forming ESD protection device with thick poly film

An ESD protection circuit for low temperature poly-silicon thin film transistor panel and a display panel using the same. The feature of the ESD protection circuit comprises an ESD detection circuit disposed between a first power line and a second power line, for outputting an enable signal when an ESD event occurs in the first power line; and a discharge device having a control terminal coupled to the output of the ESD detection circuit, for providing a discharge path between the first and second power lines when the control terminal receives the enable signal.

ESD protection circuit and display panel using the same

A method and a structure of a diode are provided. The diode is used in an electrostatic discharge protection circuit using TFT (Thin Film Transistor) fabrication technology. A semiconductor layer is formed on a substrate. A first region of a first carrier concentration is formed in the semiconductor layer. A second region of a second carrier concentration is formed in the semiconductor layer. An insulator is formed on the semiconductor layer. The insulator layer is etched to form at least a contact window. The contact window exposes a portion of an upper surface of the semiconductor layer. A metal layer is formed on the insulator layer. The metal layer fills up the contact window to contact the semiconductor layer.

Method and structure of diode

Growing community of inventors

Taoyuan, Taiwan

Sheng-Chieh Yang