Chunghwa Picture Tubes, Ltd.

Sheng-Chi Lee

Kuang-Lang Chen

Ching-Hui Lin

Yi-Sheng Yu

Hsu-Pin Kao

Wen-Rung Huang

Chun-Hsu Lin

Ching-Chung Cheng

Shiuh-Bin Kao

Yuan-Chi Lin

Te-Hua Teng

Yi-Liang Chen

Rui-Cheng Huang

Chiung-Wei Lin

A method of fabricating a poly silicon layer comprising the following steps is provided. First, a substrate is provided and an amorphous silicon layer is formed on the substrate. A patterned metal layer is formed on the amorphous silicon layer. Next, a pulsed rapid thermal annealing process is performed to form a metal silicide between the patterned metal layer and the amorphous silicon layer, wherein the patterned metal layer and the amorphous silicon layer are adopted for conducting thermal energy to the amorphous silicon layer such that the amorphous silicon layer is converted into a polysilicon layer. Finally, the patterned metal layer is removed. Accordingly, the above processes may prevent the poly silicon layer from metal contamination.

Method of fabricating poly silicon layer

The present invention provides a method for improving the adhesion capability between the &#x3c0;-type bus electrode and ITO (indium tin oxide) transparent conductive layer. The method includes an ITO transparent conductive layer as an ITO electrode is formed on the glass substrate by sputtering method. Then, a photoresist layer with a cavity pattern is formed on the portion of the ITO transparent conductive film. Next, an etching process is used to remove portion of the ITO transparent conductive film to form a cavity within the ITO transparent conductive film. Then, after removing the photoresist layer, a silver paste as a bus electrode is formed on the glass substrate and on the ITO transparent conductor film to form a pi (&#x3c0;) type bus electrode by print method. Due to the pi side of the pi-type electrode is formed on the cavity thereby the adhesion capability between the pi-type bus electrode and exposed glass substrate within the cavity, such that the adhesion capability between the &#x3c0; type bus electrode and ITO conductive film can be improved. Thus, the edge warp phenomenon of the &#x3c0; type bus electrode can be diminished.

Method for forming pi-type assistant electrode

A discharge electrode structure of a plasma display panel is described. The discharge electrode structure includes a plurality of expanding electrodes or expanding portions that each one has a symmetric structure. The expanding electrodes are alternately coupled to a pair of conductive electrodes that are on the edge of a plurality of luminant cells in one row. Therefore, oblique symmetric electrodes are disposed at opposite corner location of each luminant cell.

Discharge electrode structure of plasma display panel

A barrier rib structure for a plasma display panel is described. The barrier rib structure formed on a back substrate has a plurality of parallel barrier ribs. Each barrier rib has a plurality of discharge spaces therein divided by separate walls. Each of the discharge spaces is connected to a small gas channel beside the barrier rib through a small connect opening.

Barrier rib structure for plasma display panel

A barrier rib structure for a plasma display panel is described. The barrier rib structure formed on a back substrate has a plurality of parallel barrier ribs. Each barrier rib has a plurality of nodes composed of two side-expanded trapezoid bulges. The barrier ribs are arranged according to the nodes to form a plurality of discharge spaces between the barrier ribs and a plurality of gas channels between the nodes to connect the discharge space.

In an alternating current discharge type plasma display panel (PDP) a plurality of parallel barrier walls are formed on a top surface of a back substrate of the PDP and barrier walls are disposed corresponding to cross-points of X electrodes and Y electrodes on a front substrate of the PDP. A structure includes a plurality of discharge cells between the adjacent barrier walls having smaller width corresponding to the X and Y electrodes for forming a large first space, a plurality of non-discharge cells each between the adjacent discharge cells for forming a small second space served as a gas channel between the adjacent discharge cells, and a junction between one discharge cell and the adjacent non-discharge cell, such that energy released from a gas discharge in the discharge cells is concentrated within the discharge cells for increasing discharge efficiency.

Growing community of inventors

Taipei, Taiwan

Sheng-Chi Lee