Advanced Semiconductor Engineering, Inc.

National Chung Cheng University

Sheng-Chi Hsieh

Chien-Hua Chen

Teck-Chong Lee

Cheng-Yuan Kung

Hung-Yi Lin

Chih-Pin Hung

Chen-Chao Wang

Pao-Nan Lee

Chia-Chan Chang

Hsu-Chiang Shih

Sheng-Fuh Chang

Cheng-Yu Ho

Chun-Chi Lin

The present disclosure relates to a wireless communication module. The wireless communication module includes a first antenna layer and a second antenna layer non-coplanar with the second antenna layer. An electromagnetic wave of the first antenna and the second antenna are configured to have far-field interference to each other.

Semiconductor device package and method of manufacturing the same

A semiconductor device package includes a glass carrier, a package body, a first circuit layer and a first antenna layer. The glass carrier has a first surface and a second surface opposite to the first surface. The package body is disposed on the first surface of the glass carrier. The package body has an interconnection structure penetrating the package body. The first circuit layer is disposed on the package body. The first circuit layer has a redistribution layer (RDL) electrically connected to the interconnection structure of the package body. The first antenna layer is disposed on the second surface of the glass carrier.

The present disclosure relates to a semiconductor package and a method of manufacturing the same. In some embodiments, a semiconductor package includes a substrate, at least one die, a sealing ring and an inductor. The at least one die is mounted on the substrate and includes a plurality of component structures operating with acoustic waves. The component structures are arranged on a side of the at least one die that faces the substrate. The sealing ring is disposed between the at least one die and the substrate and surrounds the component structures. The inductor is disposed in the substrate.

Semiconductor package and semiconductor process

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a circuit layer, a first package body, a first antenna and an electronic component. The circuit layer has a first surface and a second surface opposite to the first surface. The first package body is disposed on the first surface of the circuit layer. The first antenna penetrates the first package body and is electrically connected to the circuit layer. The electronic component is disposed on the second surface of the circuit layer.

A semiconductor device package includes a first glass carrier, a package body, a first circuit layer and a first antenna layer. The first circuit layer is disposed on the first surface of the first glass carrier. The first circuit layer has a redistribution layer (RDL). The package body is disposed on the first circuit layer. The package body has an interconnection structure penetrating the package body and is electrically connected to the RDL of the first circuit layer. The first antenna layer is disposed on the second surface of the first glass carrier.

An electrical device comprises a substrate, a first dielectric layer, a first die, an adjustable inductor and a second die. The substrate has a first surface. The first dielectric layer is disposed on the first surface of the substrate and has a first surface. The first die is surrounded by the first dielectric layer. The adjustable inductor is electrically connected to the first die. The adjustable inductor comprises a plurality of pillars surrounded by the first dielectric layer, a plurality of first metal strips disposed on the first surface of the first dielectric layer and electrically connected to the pillars, and a plurality of second metal strips disposed on the first surface of the first dielectric layer and electrically connected to the pillars. A width of at least one of the second metal strips is different than a width of at least one of the first metal strips. The second die is electrically connected to the adjustable inductor.

Electrical device

A semiconductor device package includes: (1) a substrate having a first surface and a second surface opposite to the first surface; (2) a first patterned conductive layer on the first surface of the substrate and having a first surface and a second surface, wherein the second surface of the first patterned conductive layer is adjacent to the substrate and opposite to the first surface of the first patterned conductive layer; (3) a first insulation layer on the first surface of the substrate and having a first surface and a second surface, wherein the second surface of the first insulation layer is adjacent to the substrate and opposite to the first surface of the first insulation layer; and (4) a second patterned conductive layer extending from the first surface of the first insulation layer to the second surface of the substrate, the second patterned conductive layer electrically connected to the first patterned conductive layer.

Semiconductor device package

A method for manufacturing a semiconductor device package includes providing a substrate having a first surface and a second surface opposite to the first surface; disposing a passive component layer on the first surface of the substrate; after disposing the passive component layer, forming at least one via in the substrate, wherein the via penetrates the substrate and the passive component layer; and disposing a conductive layer on the passive component layer and filling the via with the conductive layer.

A semiconductor device includes a substrate and at least one inductor on the substrate. The inductor includes top portions separated from one another, bottom portions separated from one another, and side portions separated from one other. Each side portion extends between one of the top portions and one of the bottom portions. A semiconductor device includes a substrate, a first patterned conductive layer on the substrate, a second patterned conductive layer, and at least one dielectric layer between the first patterned conductive layer and the second patterned conductive layer. The first patterned conductive layer defines bottom crossbars separated from each other, each bottom crossbar including a bend angle. The second patterned conductive layer defines top crossbars separated from each other, wherein each top crossbar is electrically connected to a bottom crossbar.

Semiconductor devices

A semiconductor device package includes a carrier, a first insulation layer, a capacitor element, a plurality of interconnection structures, a plurality of substantially parallel top-side metal bars, and a plurality of substantially parallel bottom-side metal bars. The first insulation layer is on the carrier and has a first surface and a second surface adjacent to the carrier and opposite to the first surface, the first insulation layer defining a plurality of through holes. The capacitor element is in the first insulation layer, the capacitor element including a top electrode and a bottom electrode. The plurality of interconnection structures are within the through holes and formed as conductive through holes. The plurality of substantially parallel top-side metal bars are on the first surface of the first insulation layer. The plurality of substantially parallel bottom-side metal bars are on the second surface of the first insulation layer.

A semiconductor device and a method for manufacturing the same is described. The semiconductor device includes a substrate, a first capacitor and a second capacitor. The first capacitor includes a first conductive layer, a first insulating layer and a second conductive layer. The first conductive layer is disposed on the substrate. The first insulating layer is disposed on the first conductive layer and has a first peripheral edge. The second conductive layer is disposed on the first insulating layer and has a second peripheral edge. The second capacitor includes a third conductive layer, a second insulating layer and the second conductive layer. The second insulating layer is disposed on the second conductive layer and has a third peripheral edge. The third conductive layer is disposed on the second insulating layer and has a fourth peripheral edge. The first, second, third and fourth peripheral edges are aligned with one another.

Semiconductor device and method of manufacturing the same

A high-frequency chip antenna measurement system includes a platform; two piers; an arching; a stepper motor; an indication and fastening assembly having a source antenna holder and an illuminant indicator; a carrier stage; a chip antenna carrier having a support member and two sloping posts extending upward and outward from a top end of the support member, two chip antenna carrier benches being mounted to top ends of the two sloping posts respectively; a probe carrier having a support plate directionally variably fixed to the carrier substrate, two props fixed to the support member and parallel to each other and extending outward and upward slantingways, and a probe carrier bench mounted to top ends of the two props for bearing a probe; and a bridging member having two ends mounted to the chip antenna carrier benches.

Growing community of inventors

Kaohsiung, Taiwan

Sheng-Chi Hsieh