Guangzhou Rantion Technology Co., Ltd.

Donner Technology LLC

The South China University of Technology

Sheng Chen

Guoqiang Li

Wenliang Wang

Jixing Chai

A preparation method for growing a germanium sulfide (GeS) single-crystal thin film on a SiOsubstrate includes: cleaning a surface of a substrate with acetone, ethanol and deionized water, where the substrate is a Si/SiOsubstrate or a SiOglass substrate; photoetching the substrate, spin-coating a photoresist, and performing photoetching and dry etching or wet etching to obtain a groove pattern; depositing a germanium (Ge)-crystal layer in the groove pattern of the substrate to obtain a treated substrate; and putting the treated substrate into a chemical vapor deposition (CVD) device for growth, a growth source being high-purity sulfur (S) powder and high-purity Ge powder, thereby obtaining a GeSsingle-crystal thin film on the SiOsubstrate. The preparation method can grow GeSsingle crystals on the SiOsubstrate. The GeSsingle crystals have a high crystalline quality and a small surface roughness.

Preparation method for growing germanium sulfide (GeS) single-crystal thin film on SiOsubstrate

Sequencer

Microphone

Growing community of inventors

Guangzhou, China

Sheng Chen