Taiwan Semiconductor Manufacturing Comp. Ltd.

Sheng-Chao Chuang

Hsin-Ying Ho

Kao-Feng Liao

Peng-Chung Jangjian

Chun-Wen Hsiao

Kei-Wei Chen

Chun-Chieh Lin

Liang-Guang Chen

Chih Hung Chen

Fu-Ming Huang

Ting-Hsun Chang

Ji James Cui

Michael Yen

A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.

Chemical mechanical planarization tool

A device includes a semiconductor fin protruding from a substrate, a first gate stack over the semiconductor fin and a second gate stack over the semiconductor fin, a first source/drain region in the semiconductor fin adjacent the first gate stack and a second source/drain region in the semiconductor fin adjacent the second gate stack, a first layer of a first dielectric material on the first gate stack and a second layer of the first dielectric material on the second gate stack, a first source/drain contact on the first source/drain region and adjacent the first gate stack, a first layer of a second dielectric material on a top surface of the first source/drain contact, and a second source/drain contact on the second source/drain region and adjacent the second gate stack, wherein the top surface of the second source/drain contact is free of the second dielectric material.

FinFET contacts and method forming same

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Hsinchu, Taiwan

Sheng-Chao Chuang