Upi Semiconductor Corporation

Upl Semiconductor Corp.

Sheng-An Ko

Bo-Zhou Ke

A driving circuit and a switch signal generation method are provided. The driving circuit receives a PWM signal and provides a first switch signal and a second switch signal. The driving circuit includes a logical signal circuit, a lower bridge dead time circuit and a lower bridge driving circuit. The logical signal circuit provides a first logical signal and a second logical signal according to the PWM signal. The lower bridge dead time circuit determines a leading edge of a lower bridge dead time signal according to the first logical signal and determines a trailing edge of lower bridge dead time signal according to a trailing edge of first switch signal. The lower bridge driving circuit determines a leading edge of second switch signal according to second logical signal and determines a trailing edge of second switch signal according to the trailing edge of lower bridge dead time signal.

Driving circuit and switch signal generation method thereof

A DC-to-DC converting circuit includes a power switch unit, a second power switch, a phase node, a boosted circuit and a sensing circuit. The power switch unit includes a first power switch, a sensing element, a first end, a second end and a sensing end. The sensing element is connected to the sensing end and the first end. The first end is connected to an input voltage. The second power switch is connected to the first power switch. The phase node is located between the power switch unit and the second power switch and is connected to the second end. The boosted circuit boosts the input voltage to a first operation voltage and provides the first operation voltage to the sensing end. The first operation voltage is higher than the input voltage. The sensing circuit is connected to the boosted circuit and the sensing end to obtain a sensing voltage.

DC-to-DC converting circuit and integrated circuit of power circuit

A power metal oxide semiconductor (MOS) transistor die with a temperature sensing function and an integrated circuit are provided. The power MOS transistor die has a control terminal, a phase terminal, a ground terminal and a temperature signal output terminal, and that further includes a power switch part and a temperature sensing part. The power switch part has: a first electrode coupled to the control terminal; a second electrode coupled to the ground terminal; and a third electrode coupled to the phase terminal. The temperature sensing part has: a first electrode; a second electrode coupled to the temperature signal output terminal; and a third electrode coupled to the third electrode of the power switch part. The power switch part and the temperature sensing part are configured as a MOS transistor made by a same manufacturing process, and are capable of sensing temperature precisely.

Growing community of inventors

Hsinchu County, Taiwan

Sheng-An Ko