Intel Corporation

Shenavia S Howell

Peng T Li

Sergio Antonio Chan Arguedas

Mitul Bharat Modi

Deepak Goyal

Manish Dubey

John J Beatty

Kelly P Lofgreen

Ken P Hackenberg

Suzana Prstic

Bamidele Daniel Falola

Malavarayan Sankarasubramanian

John Harper

Yongmei Liu

Raymond A Krick

Susmriti Das Mahapatra

Karthik Visvanathan

An integrated circuit (IC) package comprising a die having a front side and a back side. A solder thermal interface material (STIM) comprising a first metal is over the backside. The TIM has a thermal conductivity of not less than 40 W/mK; and a die backside material (DBM) comprising a second metal over the STIM, wherein the DBM has a CTE of not less than 18×10m/mK, wherein an interface between the STIM and the DBM comprises at least one intermetallic compound (IMC) of the first metal and the second metal.

Chip-scale package architectures containing a die back side metal and a solder thermal interface material

Embodiments may relate to a microelectronic package that includes a lid coupled with a package substrate such that a die is positioned between the lid and the package substrate. The lid may include a heating element that is to heat an area between the lid and the die. Other embodiments may be described or claimed.

Integrated heat spreader (IHS) with heating element

Disclosed herein are integrated circuit (IC) packages with asymmetric adhesion material regions, as well as related methods and devices. For example, in some embodiments, an IC package may include a solder thermal interface material (STIM) between a die of the IC package and a lid of the IC package. The lid of the IC package may include an adhesion material region, in contact with the STIM, that is asymmetric with respect to the die.

Integrated circuit packages with asymmetric adhesion material regions

Embodiments may relate to a microelectronic package that includes a die and a backside metallization (BSM) layer positioned on the face of the die. The BSM layer may include a feature that indicates that the BSM layer was formed on the face of the die by a masked deposition technique. Other embodiments may be described or claimed.

Package-level backside metallization (BSM)

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Chandler, AZ, United States of America

Shenavia S Howell