University of Missouri

Shen Zhu

Henry W White

Yungryel Ryu

A process for preparing p-n or n-p junctions having a p-type oxide film is disclosed. In one embodiment, a p-type zinc oxide film has a net acceptor concentration of at least about 10acceptors/cm.

Process for preparing p-n junctions having a p-type ZnO film

A p-type oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, a p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type oxide film has a net acceptor concentration of at least about 10 acceptors/cm , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm /Vs.

Zinc oxide films containing p-type dopant and process for preparing same

A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 acceptors/cm , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm /Vs.

Process for preparing zinc oxide films containing p-type dopant

A p-type zinc oxide film and a process for preparing the film and p-n or n-p junctions is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10 acceptors/cm , a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm /Vs.

Zinc oxide films containing P-type dopant and process for preparing same

Oxide films and process for preparing same

A p-type zinc oxide film and a process for preparing the film is disclosed. In a preferred embodiment, the p-type zinc oxide film contains arsenic and is grown on a gallium arsenide substrate. The p-type zinc oxide film has a net acceptor concentration of at least about 10,acceptors/cm,, a resistivity of no greater than about 1 ohm-cm, and a Hall mobility of between about 0.1 and about 50 cm,/Vs.

Growing community of inventors

Huntsville, AL, United States of America

Shen Zhu