Genesis Photonics Inc.

Playnitride Inc.

Shen-Jie Wang

Yu-Chu Li

Jyun-De Wu

Ching-Liang Lin

Yen-Lin Lai

Chi-Feng Huang

Chun-Chieh Lee

Kuan-Yung Liao

Chien-Chih Yen

A light emitting device includes an epitaxial structure. The epitaxial structure includes a first type semiconductor layer, a second type semiconductor layer and a light emitting layer. The first type semiconductor layer includes a first semiconductor sublayer. The light emitting layer is disposed between the first type semiconductor layer and the second type semiconductor layer. The first semiconductor sublayer includes a heavily doped part and a lightly doped part which are doped by a first type dopant. A doping concentration of the first type dopant in the heavily doped part is equal to 10atoms/cmor between 10atoms/cmand 10atoms/cm. A doping concentration of the first type dopant in the lightly doped part is less than or equal to 10atoms/cm.

Light emitting device

A patterned substrate includes a main base and a plurality of patterned structures. The main base has at least one device-disposed region and a cutting region surrounding the device-disposed region. The patterned structures are integratedly formed with the main base, and only distributed in the cutting region of the main base. The patterned structures are separated from each other.

Patterned substrate and light emitting diode wafer

A semiconductor structure includes a first-type doped semiconductor layer, a light emitting layer, a second-type doped semiconductor layer comprising AlInGaN layers, at least one GaN based layer, and an ohmic contact layer. The light emitting layer is disposed on the first-type doped semiconductor layer, and the second-type doped semiconductor layer is disposed on the light emitting layer. The AlInGaN layers stacked on the light emitting layer, where 0&#x3c;x&#x3c;1, 0&#x2264;y&#x3c;1, and 0&#x3c;x+y&#x3c;1, and the GaN based layer interposed between two of the AlInGaN layers, and the ohmic contact layer is disposed on the AlInGaN layers.

Semiconductor structure

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure mainly includes a stress control layer disposed between a light emitting layer and a p-type carrier blocking layer. The p-type carrier blocking layer is made from AlGaN (0&#x3c;x&#x3c;1) while the stress control layer is made from AlInGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;x+y&#x3c;1). The light emitting layer has a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. There is one well layer disposed between the two barrier layers. Thereby the stress control layer not only improves crystal quality degradation caused by lattice mismatch between the p-type carrier blocking layer and the light emitting layer but also reduces effects of compressive stress on the well layer caused by material differences.

A semiconductor light emitting device including an N-type semiconductor layer, a P-type semiconductor layer, a light emitting layer and a strain relief layer is provided. The light emitting layer is disposed between the N-type semiconductor layer and the P-type semiconductor layer, and the light emitting layer is a multiple quantum well structure. The strain relief layer is disposed between the light emitting layer and the N-type semiconductor layer, and is made of InGaN, where 0&#x3c;x&#x3c;1. The difference between any two values of x corresponded to any two positions in the strain relief layer is greater than &#x2212;0.01 and less than 0.01. The thickness of the strain relief layer is larger than the thickness of each well layer of the multiple quantum well structure.

Semiconductor light emitting device

A nitride semiconductor structure and a semiconductor light emitting device including the same are revealed. The nitride semiconductor structure includes a multiple quantum well structure formed by a plurality of well layers and barrier layers stacked alternately. One well layer is disposed between every two barrier layers. The barrier layer is made of AlInGaN (0&#x3c;x&#x3c;1, 0&#x3c;y&#x3c;1, 0&#x3c;x+y&#x3c;1) while the well layer is made of InGaN (0&#x3c;z&#x3c;1). Thereby quaternary composition is adjusted for lattice match between the barrier layers and the well layers. Thus crystal defect caused by lattice mismatch is improved.

Nitride semiconductor structure and semiconductor light emitting device including the same

A semiconductor light-emitting device including an N-type semiconductor layer, a plurality of P-type semiconductor layers, a light-emitting layer, and a contact layer is provided. The light-emitting layer is disposed between the N-type semiconductor layer and the whole of the P-type semiconductor layers. The P-type semiconductor layers are disposed between the contact layer and the light-emitting layer. All the P-type semiconductor layers between the light-emitting layer and the contact layer include aluminum.

Semiconductor light-emitting device

A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer.

Growing community of inventors

Tainan, Taiwan

Shen-Jie Wang