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Taiwan Semiconductor Manufacturing Comp. Ltd.

Shen H Wang

Cheng M Kuo

Hsu Ming Hsiao

Kung Shu Hsu

Shiang-Bau Wang

Che-fu Chen

Hong Pin Lin

Recesses may be formed in portions of an ILD layer of a semiconductor device in a highly uniform manner. Uniformity in depths of the recesses may be increased by configuring flows of gases in an etch tool to promote uniformity of etch rates (and thus, etch depth) across the semiconductor device, from semiconductor device to semiconductor device, and/or from wafer to wafer. In particular, the flow rates of gases at various inlets of the etch tool may be optimized to provide recess depth tuning, which increases the process window for forming the recesses in the portions of the ILD layer. In this way, the increased uniformity of the recesses in the portions of the ILD layer enables highly uniform capping layers to be formed in the recesses.

Semiconductor device and methods of formation

In a method of manufacturing a semiconductor device, a sacrificial gate structure including sacrificial gate electrode is formed over a substrate. A first dielectric layer is formed over the sacrificial gate structure. A second dielectric layer is formed over the first dielectric layer. The second and first dielectric layers are planarized and recessed, and an upper portion of the sacrificial gate structure is exposed. A third dielectric layer is formed over the exposed sacrificial gate structure and over the first dielectric layer. A fourth dielectric layer is formed over the third dielectric layer. The fourth and third dielectric layers are planarized, and the sacrificial gate electrode is exposed and part of the third dielectric layer remains on the recessed first dielectric layer. The recessing the first dielectric layer comprises a first etching operation and a second etching operation using a different etching as from the first etching operation.

Method of manufacturing a semiconductor device and a semiconductor device

An improved umbrella framework having a powerful strutting action is provided. The umbrella framework includes a strut frame member situated at the underside of a first umbrella frame member. The outer end of the strut frame member is connected to the outer end of a second umbrella frame member. The center of the strut frame member is connected to a support strut and the inner end is connected to a center guide. The center guide is installed onto the umbrella pole between a positioning ring and an upper guide. A sliding guide is disposed on the umbrella pole below the positioning ring. The sliding guide is operated to open the umbrella, whereupon the support strut effectively actuates the movement of the commonly connected strut frame member, the second umbrella frame member and the tail umbrella frame member.

Powerful strutting action umbrella framework

An improved four-section umbrella framework is provided. The framework includes an attachable flexible frame member having a small slot in the main frame member of the umbrella framework. A connector is positioned inside the main frame member such that the latch ring of the connector protrudes through the small slot on the main frame member and provides for the simple attachment of a hook formed at the end of a flexible frame member to form a secure and practical hook joint.

Growing community of inventors

Kon Kaung Village, Ho Li, Taichung, Taiwan

Shen H Wang