Qorvo Us, Inc.

Triquint Semiconductor Corporation

Sheila K Hurtt

Timothy S Henderson

Corey A Nevers

Dana A Schwartz

A high bandgap Schottky contact layer device and methods for producing same are provided herein. According to one aspect, a high bandgap Schottky contact layer device comprises a substrate, a first Schottky layer over the substrate, the first Schottky layer having a first bandgap, and a second Schottky layer over the first Schottky layer, the second Schottky layer having a second bandgap. The device further comprises a first metal contact over the second Schottky layer and at least one ohmic contact, a portion of which being in direct contact with the substrate. The first bandgap is greater than 1.7 electronvolts (eV). In one embodiment, the second bandgap is also greater than 1.7 eV.

High bandgap Schottky contact layer device

The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (pHEMTs). The disclosed semiconductor device includes a substrate, a lower pHEMT structure with a lower pHEMT, an isolation layer, and an upper pHEMT structure with an upper pHEMT. The lower pHEMT structure is formed over the substrate and has a first region and a second region that is laterally disposed with the first region. The lower pHEMT is formed in or on the second region. The isolation layer resides over the first region. The upper pHEMT structure is formed over the isolation layer and does not extend over the second region. Herein, the isolation layer separates the lower pHEMT structure from the upper pHEMT structure such that the lower pHEMT and the upper pHEMT operate independently from each other.

Semiconductor device with vertically integrated pHEMTs

Embodiments of the present disclosure describe apparatuses, methods, and systems of an integrated circuit (IC) device. The IC device includes a diffusion control layer as part of an emitter epitaxial structure. The IC device may utilize a common metallization scheme to simultaneously form an emitter contact and a base contact. Other embodiments may also be described and/or claimed.

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Portland, OR, United States of America

Sheila K Hurtt