The United States of America As Represented by the Administrator of the

Special Materials Research and Technology, Inc.

Sheila G Bailey

Dennis J Flood

Maria Faur

Horia M Faur

David M Wilt

Mircea Faur

Frank L DeAngelo

Disclosed is a room temperature wet chemical growth (RTWCG) process of SiO-based insulator coatings on silicon substrates for electronic and photonic (optoelectronic) device applications. The process includes soaking the Si substrates into the growth solution. The process utilizes a mixture of H.sub.2 SiF.sub.6, N-n-butylpyridinium chloride, redox Fe.sup.2+ /Fe.sup.3+ aqueous solutions, and a homogeneous catalyst.

Room temperature wet chemical growth process of SiO based oxides on

The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

Preferentially etched epitaxial liftoff of InP material

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Lakewood, OH, United States of America

Sheila G Bailey