Macronix International Co., Ltd.

Sheau-Yung Shyu

Yu-Wei Lee

Chih-Hung Wu

Lai-Ching Lin

A read only memory device includes multiple word lines, a first and second main bit line GL (n) and BL (n), sub-bit lines SB(n) to SB(n), selection switches MB(n) to MB(n), and memory cells M(n) to M(n). The memory cells M(n) to M(n) are electrically coupled to the sub-bit lines SB(n) to SB(n) and the sub-bit line SB(n+1), respectively. When the memory cell M(n) which is connected to SB(n) is read, the sub-bit lines SB(n) to SB(n) are connected to the corresponding main bit lines through the turned selection switches. At this time, the sub-bit lines SB(n) to SB(n) are not floating but are all at the same high voltage level. Therefore, the capacitance effect will not exist between them to change the voltage level of the sub-bit lines quickly.

Read only memory configuration to reduce capacitance effect between numbers of bit lines

A sense amplifier circuit for sensing data fed to its data input terminal and operating on the data according to a pre-charge signal, a latch signal and a sense amplifier enable signal. The sense amplifier circuit includes a pre-charge sense circuit that receives data from a data input terminal and outputs a first output value as well as a latching circuit that receives the first output value and outputs a second output value within a preset period. The pre-charge sense circuit further includes a first circuit and a second circuit. The first circuit is capable of pre-charging the data input terminal to a preset potential level. The second circuit produces a first output value according to the input data. In addition, the first circuit and the second circuit are connected in parallel between a voltage source and a data input terminal.

Sense amplifier circuit

A double protection virtual ground memory circuit and column decoder. Through the introduction of a double protection circuit, leakage current from the virtual ground memory is reduced and power consumed by the memory circuit is lowered. Ultimately, sensing range of data within the memory by a sense amplifier is improved.

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Hsinchu, Taiwan

Sheau-Yung Shyu