Applied Materials, Inc.

Microsoft Corporation

Shawn Thomas

Hui W Chen

Kirk Allen Fisher

Yen Lin Leow

Xinning Luan

Naveen Chand

Gautam Pulla

Jeffrey Kay

Yamin Wang

Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800° C. to less than 1,000° C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000° C. to about 1,400° C. to form a second silicon carbide layer on the first silicon carbide layer.

Methods of forming silicon carbide coated base substrates at multiple temperatures

Embodiments of the present disclosure generally relate to silicon carbide coated base substrates, silicon carbide substrates thereof, and methods for forming silicon carbide coated base substrates. In some embodiments, a method includes introducing a first silicon-containing precursor to a process chamber at a first temperature of about 800&#xb0; C. to less than 1,000&#xb0; C. to form a first silicon carbide layer on a base substrate. The method includes introducing a second silicon-containing precursor, that is the same or different than the first silicon-containing precursor, to the process chamber at a second temperature of about 1,000&#xb0; C. to about 1,400&#xb0; C. to form a second silicon carbide layer on the first silicon carbide layer.

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Chesterfield, MO, United States of America

Shawn Thomas