Crystal Is, Inc.

Shawn Robert Gibb

Leo J Schowalter

James R Grandusky

Robert T Bondokov

Shailaja P Rao

Kosuke Sato

Craig Moe

Tomohiro Morishita

Glen Alfred Slack

Kenneth E Morgan

Mark C Mendrick

Muhammad Jamil

Joseph A Smart

Shiwen Liu

In various embodiments, light-emitting devices incorporate smooth contact layers and polarization doping (i.e., underlying layers substantially free of dopant impurities) and exhibit high photon extraction efficiencies.

Pseudomorphic electronic and optoelectronic devices having planar contacts

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density&#x2264;100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Defect reduction in seeded aluminum nitride crystal growth

In various embodiments, light-emitting devices incorporate graded layers with compositional offsets at one or both end points of the graded layer to promote formation of two-dimensional carrier gases and polarization doping, thereby enhancing device performance.

Ultraviolet light-emitting devices incorporating graded layers and compositional offsets

In various embodiments, a semiconductor device includes an aluminum nitride single-crystal substrate, a pseudomorphic strained layer disposed thereover that comprises at least one of AlN, GaN, InN, or an alloy thereof, and, disposed over the strained layer, a semiconductor layer that is lattice-mismatched to the substrate and substantially relaxed.

Thick pseudomorphic nitride epitaxial layers

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density &#x2264;100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Ultraviolet light-emitting devices incorporating two-dimensional hole gases

In various embodiments, non-zero thermal gradients are formed within a growth chamber both substantially parallel and substantially perpendicular to the growth direction during formation of semiconductor crystals, where the ratio of the two thermal gradients (parallel to perpendicular) is less than 10, by, e.g., arrangement of thermal shields outside of the growth chamber.

System for growth of large aluminum nitride single crystals with thermal-gradient control

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density&#x2266;100 cm. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

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Clifton Park, NY, United States of America

Shawn Robert Gibb