Carl Zeiss Microscopy Gmbh

Carl Zeiss Smt Gmbh

Alis Corporation

Carl Zeiss Nts Gmbh

Shawn McVey

John Anthony Notte, Iv

FHM-Faridur Rahman

Weijie Huang

Raymond Hill

Billy W Ward

Randall G Percival

Louis S Farkas, Iii

Ulrich Mantz

Mark D DiManna

Alexander Groholski

Johannes Bihr

Richard A Comunale

Deying Xia

Louise Smith Barriss

Wilhelm Kuehn

Colin A Sanford

Brett Lewis

Brian M Bassett

John A Notte Iv

Louis S Farkas Iii

A Colin Sanford

Brian Bassett

A John Notte

Richard Communale

An inspection system serves to qualify semiconductor structures. The inspection system has an ion beam source for space-resolved exposition of the structures to be qualified with an ion beam. The inspection system also includes a secondary ion detection device with a mass spectrometer. The mass spectrometer is configured to measure an ion mass to charge ratio in a given bandwidth.

Inspection system and inspection method to qualify semiconductor structures

The present disclosure relates to a gas field ion source comprising a housing, an electrically conductive tip arranged within the housing, a gas supply for supplying one or more gases to the housing, wherein the one or more gases comprise neon or a noble gas with atoms having a mass larger than neon, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole. A surface of the extractor electrode facing the tip can be made of a material having a negative secondary ion sputter rate of less than 10per incident neon ion.

Charged particle beam system and method of operating a charged particle beam system

The disclosure relates to a method of operating a gas field ion beam system in which the gas field ion beam system comprises an external housing, an internal housing, arranged within the external housing, an electrically conductive tip arranged within the internal housing, a gas supply for supplying one or more gases to the internal housing, the gas supply having a tube terminating within the internal housing, and an extractor electrode having a hole to permit ions generated in the neighborhood of the tip to pass through the hole into the external housing. The method comprises the step of regularly heating the external housing, the internal housing, the electrically conductive tip, the tube and the extractor electrode to a temperature of above 100&#xb0; C.

The present disclosure relates to a gas field ion source having a gun housing, an electrically conductive gun can base attached to the gun housing, an inner tube mounted to the gun can base, the inner tube being made of an electrically isolating ceramic, an electrically conductive tip attached to the inner tube, an outer tube mounted to the gun can base, the outer tube being made of an electrically isolating ceramic, and an extractor electrode attached to the outer tube. The extractor electrode can have an opening for the passage of ions generated in proximity to the electrically conductive tip.

Disclosed are devices, systems, and methods are disclosed that include: (a) a first material layer positioned on a first surface of a support structure and configured to generate secondary electrons in response to incident charged particles that strike the first layer, the first layer including an aperture configured to permit a portion of the incident charged particles to pass through the aperture; and (b) a second material layer positioned on a second surface of the support structure and separated from the first layer by a distance of 0.5 cm or more, the second layer being configured to generate secondary electrons in response to charged particles that pass through the aperture and strike the second layer, where the device is a charged particle detector.

Charged particle detectors

Ion sources, systems and methods are disclosed.

Ion sources, systems and methods

Growing community of inventors

Newton, NH, United States of America

Shawn McVey