Micron Technology Incorporated

Shawn M Hilde

Boon Hor Lam

Karl L Major

Dennis G Montierth

Garrett Harwell

Christopher Gordon Wieduwilt

Jiyun Li

Greg S Hendrix

Garth N Grubb

Travis Marley

Eric J Rich-Plotkin

Methods, systems, and devices for a self-refresh state with decreased power consumption are described. A memory system may enter a self-refresh state to refresh a set of rows of memory cells at the memory system. Based on entering the self-refresh state, the memory system may execute a first set of refresh operations on the rows of memory cells according to a first rate. Additionally, the memory system may determine, while in the self-refresh state, whether to decrease the rate for executing the refresh operations to a second rate based on whether each of the rows of memory cells is refreshed according to the first rate. In cases that the memory system determines to decrease the rate for executing the refresh operations, the memory system may execute a set of second refresh operations on the rows of memory cells according to the second, slower, rate while in the self-refresh state.

Self-refresh state with decreased power consumption

Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory device are configured to add variable delays to a command. The variable delays may be provided by a host device (e.g., a test equipment) using a test mode of the memory devices. Alternatively, the variable delays may be stored in nonvolatile memory (NVM) components of the memory devices. Further, mode registers of the memory devices may be set to indicate that the command is associated with the variable delays stored in the NVM components. Further, the memory devices may include delay components configured to add the variable delays to the command. Such variable delays facilitate staggered execution of the command across multiple memory devices so as to avoid (or mitigate) issues related to an instantaneous, large amount of current drawn from a power supply connected to the memory devices.

Semiconductor device with selective command delay and associated methods and systems

In some examples, an inactive word line voltage control (IWVC) circuit may be configured to provide a respective subword driver associated with a memory bank of a plurality of memory banks a non-active potential from a default off-state word line voltage (VNWL) to a reduced voltage VNWL lower than the default VNWL following a time duration after activating the memory bank. The IWVC circuit may also be configured to provide the respective subword driver with the default VNWL responsive to precharging the memory bank. The IWVC circuit may include a multiplexer coupled to the subword driver and configured to provide the default VNWL or the reduced voltage VNWL to the respective subword driver responsive to a VNWL control signal. The IWVC circuit may also include a time control circuit configured to provide the VNWL control signal responsive to a clock signal and a time control signal.

Apparatuses and methods for reducing access device sub-threshold leakage in semiconductor devices

An exemplary memory includes a memory cell array configured to store a plurality of data bits each associated with a respective column plane, and an input/output circuit including a compression circuit configured to provide error data based on a comparison between a bit of the plurality of data bits received from the memory cell array and an expected value and based on a respective column plane of the memory cell array with which the bit is associated. The compression circuit is further configured to encode a column plane error code based on the error data for provision to a data terminal.

Apparatuses and methods to encode column plane compression data

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Meridian, ID, United States of America

Shawn M Hilde