Entegris, Inc.

Shawn D Nguyen

Bryan Clark Hendrix

Philip S H Chen

Thomas H Baum

Robert Wright, Jr

Han Wang

Dahye Kim

Sungsil Cho

Jae Eon Park

Soojin Lee

Provided is a process for the vapor deposition of molybdenum or tungsten, and the use of molybdenum hexacarbonyl (Mo(CO)) or tungsten hexacarbonyl (W(CO)) for such deposition, e.g., in the manufacture of semiconductor devices in which molybdenum-containing or tungsten-containing films are desired. In accordance with one aspect of the invention, molybdenum hexacarbonyl (Mo(CO)) has been found in vapor deposition processes such as chemical vapor deposition (CVD) to provide low resistivity, high deposition rate films in conjunction with a pulsed deposition process in which a step involving a brief pulse of HO is utilized. This pulsing with HO vapor was found to be effective in reducing the carbon content of films produced from Mo(CO)-based CVD processes.

Group VI metal deposition process

Provided are certain silicon precursor compounds which are useful in the formation of silicon-containing films in the manufacture of semiconductor devices, and more specifically to compositions and methods for forming such silicon-containing films, such as films comprising silicon dioxide or silicon nitride.

Silicon precursor compounds and method for forming silicon-containing films

Described are vapor deposition methods for depositing metal films or layers onto a substrate, wherein the metal is molybdenum or tungsten; the methods involve organometallic precursor compounds that contain the metal and one or more carbon-containing ligands, and include depositing a metal layer formed from the metal of the precursor, onto a substrate, followed by introducing oxidizer to the formed metal layer.

Methods for depositing tungsten or molybdenum films

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Danbury, CT, United States of America

Shawn D Nguyen