Vanguard International Semiconductor Corporation

Shaw-Tseng Hsia

Haw Yen

A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 uM, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.

Tungsten policide contacts for semiconductor devices

A method for creating manufacturable polycide contacts, for use in advanced semiconductor designs using images as small as 0.35 .mu.M, has been developed. An amorphous silicon film, is used as an underlay, to assist in the growth of an overlying tungsten silicide layer. The tungsten silicide deposition is performed using tungsten hexafluoride and silane, and in conjunction with the amorphous silicon underlay, results excellent step coverage in the narrow contact hole. A nitrogen anneal, using high flow rates, optimizes the adhesion characteristics of the tungsten polycide structure.

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Taipei, Taiwan

Shaw-Tseng Hsia