Ford Motor Company Limited

Ford Global Technolgoies, LLC

Shaun L McCarthy

John J Lambe

Russell J Haeberle

Kathirgamasundaram Sooriakumar

Allen H Meitzler

John L Bomback

Henry L Stadler

Margherita Zanini-Fisher

Michael Howard Parsons

Ronald C Elder

Chester J Blechinger

Robert L Forgacs

Sickafus Nathan Edward

A microelectronic device is hermetically sealed at the wafer level. A substrate is provided having associated electronics and at least one metal bonding pad. A dielectric layer, such as pyrex glass film, is sputter deposited atop the substrate to form a glass/metal seal. A glass film is thereafter planarized, preferably by chemical-mechanical polishing, to remove surface variations. A cover wafer is thereafter anodically bonded to the dielectric layer/glass film so as to define a sealed cavity for housing and protecting the substrate electronics. The resultant microelectronic device is packaged in its own hermetically sealed container at the wafer level.

Hermetically sealed microelectronic device and method of forming same

A method of fabricating a planar micro-motor particularly well-suited to batch methods of microfabricating multiple planar stepper micro-motors from a single substrate wafer. Such micro-motors, having a planar stator supported by an electrically insulating substrate, a planar rotor body aligned over the stator, and a housing integral with the substrate and forming a rotor chamber therewith in which the rotor is rotatably captured, are formed by microfabricating the stator, rotor, and housing on the substrate with a boundary of release material encapsulating the rotor body. The release material is then removed to free the rotor body for rotation within the rotor chamber. Release materials, such as poly-alpha-methylstyrene, are suitable, being removable to free the rotor by heating to at least 180.degree. C. under vacuum. In the course of the sequential processing steps during the microfabrication, multiple layers of photo-responsive patterning material are used, some of which layers are removed in their entirety, while portions of at least some of the layers of photo-responsive patterning material remain in the micro-motor to at least partially form the housing or as part of the rotor body.

Self-assembly fabrication method for planar micro-motor

A capacitance transducer has a first hermetically sealed cavity adapted to deform in response to an applied force, such as pressure or acceleration, and a second hermetically sealed cavity adapted to resist deformation in response to such applied force. The cavities are formed between two doped silicon layers separated by a selectively etched electrically insulating spacer layer. Multiple medial electrically insulating cavity area spacer segments within the second cavity resist deformation thereof in response to the applied force to be measured. The capacitance transducer can be manufactured from doped silicon wafers using well developed silicon wafer processing techniques.

Capacitance transducer article and method of fabrication

A method for making pressure sensors is disclosed. A wafer of doped silicon or other semiconductive material is selectively chemically etched (micromachined) on both sides to form a plurality of diaphragms, a thicker silicon rim surrounding each diaphragm, and a feedthrough hole corresponding to each diaphragm external to the silicon rim. A small metallized area of the upper surface of the silicon substrate on the rim adjacent each diaphragm permits external electrical connection to the silicon plate. Capacitor plates are formed by depositing a metallized film or other conductive material on a dielectric substrate in locations corresponding to the diaphragms of the silicon wafer. To permit external electrical connection to the conductive material, contact pads electrically connected to the conductive material are formed on the dielectric substrate external to the area corresponding to the diaphragms. A buffer layer of nonconductive material is disposed over the entire dielectric substrate, and then selectively removed from the contact pads. The lower surface of the silicon substrate is joined to the dielectric substrate, such that the diaphragms formed in the semiconductor material are in alignment with the conductive areas of the dielectric substrate and the contact pads on the dielectric substrate are in alignment with the feedthrough holes in the silicon wafer. The resulting assembly comprises a plurality of electric capacitors and may be cut into individual capacitive pressure sensors.

Fabrication methods for silicon/glass capacitive absolute pressure

A hot-wire mass air flow sensor includes integral, elongated silicon members with a silicon dioxide coating on which temperature sensitive resistors are deposited. The air flow sensor has an extremely low thermal conductivity material base on which is mounted one or more of the elongate silicon members. This structure maximizes the thermal impedance of the conductive path existing at the ends of the flow sensor resistors and minimizes sensor errors. A method for fabricating the air flow sensor is also provided.

Flow sensor and method of manufacture

A mass airflow meter for positioning within a duct wherein a fluid flows, particularly an air intake of an internal combustion engine, includes a symmetrical body having an axial passageway and a radial passageway. The radial passageway has a temperature dependent element positioned therein and extends from the axial passageway at an acute angle to the downstream flow of air. Accordingly, the radial passageway provides inertial separation of airborne particulate and also provides isolation from air flowing backwards through the air intake.

Mass airflow meter

A mass airflow sensor includes a silicon substrate with integral, thin, elongated silicon members between openings through the silicon substrate. A silicon dioxide coating and a metal coating on the silicon member adapt it to function as a hot wire mass airflow sensor.

Mass airflow sensor

A mass airflow sensor with backflow detection includes a first, second, and third elongated, relatively thin silicon members generally parallel to each other and spaced from each other in an orienting plane. The second silicon member, between the first and third silicon members, has a metal coating for carrying a heating current. The first and third silicon members each have a thermocouple formed thereon so as to detect temperature differences on either side of the second silicon member and thus the direction of airflow across the metal second silicon member.

Mass airflow sensor with backflow detection

A thin film electroluminescent device constructed on a smooth surface substrate on which a base conductive layer is formed, followed in sequence by an impurity doped barrier layer, an electrically resistive layer and a counterelectrode layer. The impurity doped barrier layer is doped with a material which exhibits electroluminescence. The impurity doped barrier layer is produced in a controlled oxidation process of the base conductive layer which is alloyed to a minor extent with the impurity material.

Thin film electroluminescent device

A reflective type light modulator utilizing the principal of ion injection from a switching electrode into a fluid dielectric to effect turbulent forces and the resultant movement of a light reflecting object into and out of a light path. The fluid dielectric and the movable object have similar values of specific gravity.

Reflecting type light modulator

A light modulator utilizing the principal of ion injection from a switching electrode into a fluid dielectric to effect turbulent forces and the resultant movement of a light interrupting object into and out of a light path. The fluid dielectric and the movable object have similar values of specific gravity.

Light modulator

A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff .nu..sub.co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator layer is relatively thin with respect to the metal layers and inelastic tunneling occurs. To facilitate output coupling to surface plasmon modes in the junction, the counter-electrode metal layer, from which the radiant energy is emitted, is roughened. One of the uses for the solid state source is as a light source of a spectrophotometer where the transmittance or reflectance band characteristics of a sample are determined by converting the photodetector current to its second derivative and correlating the second derivative with the applied voltage which is modulated over a predetermined range of amplitude values.

Spectrophotometer utilizing a solid state source of radiant energy

A solid state source of radiant energy having a characteristic frequency spectra with a high frequency cutoff .nu..sub.co, which is a function of the applied voltage value. The source is a metal-insulator-metal tunnel junction wherein the insulator layer is relatively thin with respect to the metal layers and inelastic tunneling occurs. To facilitate output coupling to surface plasmon modes in the junction, the counter-electrode metal layer, from which the radiant energy is emitted, is roughened.

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Ann Arbor, MI, United States of America

Shaun L McCarthy