Seagate Technology Incorporated

Shaun Eric McKinlay

Eric Walter Singleton

Victor Sapozhnikov

Mohammed Shariat Ullah Patwari

Jae-Young Yi

ZhiGuo Ge

Stacey Christine Wakeham

Konstantin Nikolaev

Liwen Tan

Carolyn Pitcher Van Dorn

Zhiguo Ge

Jiaoming Qiu

Thomas Roy Boonstra

Jae Young Yi

Junjie Quan

Samuel Martin Barthell

Peter R Krauss

Yonghua Chen

Hua Yuan

Brian William Karr

Xilin Peng

Mohammed Sharia Ullah Patwari

Taras Grigoryevich Pokhil

Levent Colak

Thu-Van Thi Nguyen

Younghua Chen

Cheng Bi

Minzhen Cai

Victor Boris Sapozhnikov

A method of planarizing a device having a surface topography with at least one material at a surface of the device is described. The method comprises the steps of depositing a stop layer over at least a portion of the at least one material which substantially retains the surface topography of the device. A sacrificial layer is deposited over at least a portion of the stop layer. A planarization process is performed on the device. The planarization process includes the steps of performing a chemical mechanical polish (CMP) on the top surface of the sacrificial layer. A physical removal step is conducted on the remainder portion of the sacrificial layer to form a planarized surface. A second CMP step and a second physical removal step are conducted, to form a planarized device.

Planarization strategy in nano-sized fabrication

A reader includes a free layer and a side shield that biases the free layer. The side shield includes a main bias layer having a first magnetic moment value and a first magnetization direction. The side shield also includes a compensation bias layer having a second magnetic moment value that is less than the first magnetic moment value and a second magnetization direction that is opposite to the first magnetization direction.

Reader with bi-layered side shields

A data reader may have a magnetoresistive stack with a magnetically free layer decoupled from a first shield by a cap. The cap can have one or more sub-layers respectively configured with a thickness of 4 nm or less as measured parallel to a longitudinal axis of the magnetoresistive stack on an air bearing surface.

Thin data reader cap

Methods of planarizing materials, such as where surface topographies are created as part of a thin film device fabrication process are described. These methods find particular application in the creation of nano-sized devices, where surface topographical features can be effectively planarized without adversely creating other surface topographies and/or causing deleterious effects a material junctions. Methods include the step of depositing a sacrificial layer overlying at least a portion of a first material layer and at least a portion of a backfilled second material at a junction between the first and second materials. The sacrificial layer substantially retains the surface topography of the microelectronic device. Chemical-mechanical planarization is performed on a surface of the sacrificial layer but leaving a remainder portion of the thickness of the sacrificial layer. Then, physical or dry chemical process is conducted for removing the remainder of the sacrificial layer and at least a portion of at least one of the first and second materials.

Methods of planarization for device fabrication with head features background

A magnetic stack is disclosed. The magnetic stack includes a magnetically responsive lamination that includes a ferromagnetic free layer, a synthetic antiferromagnetic (SAF) structure, and a spacer layer positioned between the ferromagnetic free layer and the SAF structure. The magnetically responsive lamination is separated from a sensed data bit stored in an adjacent medium by an air bearing surface (ABS). The stack also includes a first antiferromagnetic (AFM) structure coupled to the SAF structure a predetermined offset distance from the ABS, and a second AFM structure that is separated from the first AFM structure by a first shield layer.

Magnetic element with reduced shield-to-shield spacing

Implementations described and claimed herein include a reader structure, comprising a first reader, including a sensor stack and a top shield structure, the top shield structure comprises a synthetic antiferromagnetic shield (SAF) structure, including a reference layer including at least a layer of NiFe and an impurity additive, an RKKY coupling layer RKKY coupling layer (e.g., Ru layer), and a pinned layer. In another implementation, the RL of the SAF shield structure of a first reader includes at least a layer of amorphous magnetic material. Yet, in another implementation, the SAF shield structure includes an insertion layer of amorphous magnetic material under the SAF shield RL, within the SAF shield RL or between the SAF shield RL and SAF shield Ru.

Magnetoresistive sensor fabrication

Tolerances for manufacturing reader structures for transducer heads continue to grow smaller and storage density in corresponding storage media increases. Reader stop layers may be utilized during manufacturing of reader structures to protect various layers of the reader structure from recession and/or scratches while processing other non-protected layers of the reader structure. For example, the stop layer may have a very low polish rate during mechanical or chemical-mechanical polishing. Surrounding areas may be significantly polished while a structure protected by a stop layer with a very low polish rate is substantially unaffected. The stop layer may then be removed via etching, for example, after the mechanical or chemical-mechanical polishing is completed.

Magnetoresistive sensor with stop-layers

A multi-sensor reader that includes a first sensor that has a sensor stack, which includes a free layer (FL) that has a magnetization that changes according to an external magnetic field. The first sensor also includes a shielding structure that is positioned over the sensor stack. The multi-sensor reader also includes a second sensor stacked over the first sensor. The second sensor includes a sensor stack, which includes a FL that has a magnetization that changes according to the external magnetic field. The multi-sensor reader further includes an isolation layer between the first sensor and the second sensor. A FL-to-FL spacing reduction feature is included in at least one of the isolation layer or the shielding structure.

Multiple sensor magnetic reproducing device with reduced inter-sensor spacing

A stack having a seed layer structure with a first part having a first cross-track width and a free layer deposited over the seed layer structure and with a second cross-track width, wherein the first cross-track width is greater than the second cross-track width. In one implementation, the seed layer structure further comprises an antiferromagnetic (AFM) layer and a synthetic antiferromagnetic (SAF) layer. In one alternate implementation, the cross-track width of the seed layer structure is substantially equal to the combined cross-track width of the free layer and cross-track width of two permanent magnets.

Stack with wide seed layer

A reader includes top and bottom reader stacks disposed between a top and bottom shield. The top and bottom reader stacks are offset relative to each other in a downtrack direction. Top side shields surround the top reader stack in a crosstrack direction, and bottom side shields surround the bottom reader stack in the crosstrack direction. A split middle shield is between the top and bottom reader stacks and the top and bottom side shields. The split middle shield includes top and bottom portions separated by an isolation layer, the top and bottom portions respectively coupled to the top and bottom reader stacks.

Multi-stack reader with split middle shield

A reader includes top and bottom reader stacks that are offset relative to each other in a downtrack direction and disposed between a top shield and a bottom shield. Top side shields surround the top reader stack in a crosstrack direction, and bottom side shields surround the bottom reader stack in the crosstrack direction. A middle shield is between the top and bottom reader stacks and the top and bottom side shields. The middle shield includes a common electrical conductive path coupled to the top and bottom reader stacks. A middle lead is coupled to an edge of the middle shield.

Leads coupled to top and bottom reader stacks of a reader

Various embodiments may configure a data storage device with at least a magnetic element having a magnetic stack that is configured with an air bearing surface (ABS) and is separated from a side shield. The side shield can be biased by a biasing layer that contacts the side shield and is separated from the ABS.

Side shield biasing layer separated from an air bearing surface

Various embodiments may be generally directed to a magnetic element capable of reading magnetic data bits. Such a magnetic element may have at least a magnetic stack laterally adjacent a side shield and non-magnetic pedestal on an air bearing surface (ABS). The non-magnetic pedestal can be configured to have a greater stripe height from the ABS than the side shield.

Side shield pedestal for data readers

A data reader and associated method of making are generally provided. A data reader capable of sensing adjacent data bits may be configured at least with a magnetic stack disposed between first and second side shields. Each side shield may have a polish stop layer that is tuned to provide a first predetermined polish rate.

Growing community of inventors

Eden Prairie, MN, United States of America

Shaun Eric McKinlay