Amkor Technology Singapore Holding Pte. Ltd.

Amkor Technology, Inc.

Shaun Bowers

Jin Young Khim

Won Bae Bang

Dong Joo Park

Jae Yun Kim

Min Hwa Chang

Gi Tae Lim

Gyu Wan Han

Se Hwan Hong

Myung Jea Choi

Byoung Woo Cho

Seung Jae Yu

Seul Bee Lee

Won Chul Do

Tae Yong Lee

Ji Yeon Ryu

Ramakanth Alapati

Ron Huemoeller

Yi Seul Han

Ju Hyung Lee

Kyung Rok Park

SAng Hyeon Kang

Byong Jin Kim

Yoshio Matsuda

Gi Jeong Kim

Jae Min Bae

Ju Young Lee

Bob Shih-Wei Kuo

Hyung Il Jeon

Tae Kyeong Hwang

Russell Shumway

Won Myoung Ki

Pedro Joel Rivera-Marty

Bora Baloglu

In Su Mok

Yong Ho Son

George Scott

Sang Goo Kang

Koichi Minami

Soo Hyun Kim

Seung Woo Lee

In one example, an electronic device comprises a substrate structure, comprising a base comprising a top side and a bottom side, a first lead, and a flag comprising a top side, a bottom side, and a flag lead. The electronic device also comprises an electronic component comprising a top side and a bottom side, a first electrode at the bottom side of the electronic component, and second electrode at the top side of the electronic component, an encapsulant contacting a lateral side of the electronic component and a lateral side of the base, and a first interconnect in the encapsulant, coupled between the first electrode and the first lead. The second electrode is coupled with the flag lead via the base. Other examples and related methods are also disclosed herein.

Electronic devices and methods of manufacturing electronic devices

In one example, an electronic device comprises a substrate comprising a first side and a second side, a first a lead on the second side, and a cavity in the second side adjacent to the first lead, an electronic component in the cavity and comprising a first terminal, a second terminal, and a third terminal, and a device encapsulant in the cavity and contacting a lateral side of the electronic component, and contacting a lateral side of the first lead opposite to the cavity. Other examples and related methods are also disclosed herein.

Semiconductor devices and methods of manufacturing semiconductor devices

In one example, an electronic device includes an electronic component including a component first side, a component second side opposite to the component first side, and a component lateral side connecting the component first side to the component second side, wherein the component lateral side defines a perimeter of the electronic component. A first intermediate terminal is coupled to the electronic component within the perimeter. An intermediate component is coupled to the first intermediate terminal within the perimeter. An encapsulant structure is over the intermediate component, at least a portion of the first intermediate terminal, and at least a portion of the electronic component. Other examples and related methods are also disclosed herein.

An electronic device structure includes a substrate having a substrate first major surface, an opposing substrate second major surface, and a first conductive pattern adjacent to the substrate first major surface. A first electronic component is coupled to the substrate and includes a first component first side and a first device structure adjacent to the first component first side. A second electronic component is adjacent to the substrate second major surface and includes a second component first side and a second device structure adjacent to the second component first side. A third electronic component is coupled to the substrate. The first electronic component is generally orthogonal to the substrate and the first device structure is oriented in a first direction, and the second device structure is oriented in a second direction different than the first direction.

Method of forming an electronic device structure having an electronic component with an on-edge orientation and related structures

In one example, a semiconductor device comprises a first base substrate comprising a first base conductive structure, a first encapsulant contacting a lateral side of the first base substrate, a redistribution structure (RDS) substrate over the base substrate and comprising an RDS conductive structure coupled with the first base conductive structure, a first electronic component over the RDS substrate and over a first component terminal coupled with the RDS conductive structure, and a second encapsulant over the RDS substrate and contacting a lateral side of the first electronic component. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The encapsulant can cover the substrate inner sidewall and the device stack and can fill the cavity. Other examples and related methods are disclosed herein.

Semiconductor devices and related methods

In one example, a semiconductor device comprises a substrate comprising a conductive structure, an electronic component over a top side of the substrate and electrically coupled with the conductive structure, a lid structure over the substrate and over the electronic component, and a vertical interconnect in the lid structure extending to a top surface of the lid structure and electrically coupled with the conductive structure. Other examples and related methods are also disclosed herein.

Semiconductor devices comprising a lid structure and methods of manufacturing semiconductor devices comprising a lid structure

A packaged semiconductor device includes a substrate with first and second opposing major surfaces. A stacked semiconductor device structure is connected to the first major surface and includes a plurality of semiconductor die having terminals. Conductive interconnect structures electrically connect the terminals of the semiconductor dies together. The semiconductor dies are stacked together so that the terminals are exposed, and the stacked semiconductor device structure comprises a stepped profile. The conductive interconnect structures comprise a conformal layer that substantially follows the stepped profile.

A method of forming an electronic device structure includes providing an electronic component having a first major surface, an opposing second major surface, a first edge surface, and an opposing second edge surface. A substrate having a substrate first major surface and an opposing substrate second major surface is provided. The second major surface of the first electronic component is placed proximate to the substrate first major surface and providing a conductive material adjacent the first edge surface of the first electronic component. The conductive material is exposed to an elevated temperature to reflow the conductive material to raise the first electronic component into an upright position such that the second edge surface is spaced further away from the substrate first major surface than the first edge surface. The method is suitable for providing electronic components, such as antenna, sensors, or optical devices in a vertical or on-edge.

In one example, a semiconductor device can comprise a substrate, a device stack, first and second internal interconnects, and an encapsulant. The substrate can comprise a first and second substrate sides opposite each other, a substrate outer sidewall between the first substrate side and the second substrate side, and a substrate inner sidewall defining a cavity between the first substrate side and the second substrate side. The device stack can be in the cavity and can comprise a first electronic device, and a second electronic device stacked on the first electronic device. The first internal interconnect can be coupled to the substrate and the device stack. The second internal interconnect can be coupled to the second electronic device and the first electronic device. The encapsulant can cover the substrate inner sidewall and the device stack, and can fill the cavity. Other examples and related methods are disclosed herein.

A method includes mounting a window substrate to a carrier tape. The window substrate has a window extending between an upper surface of the window substrate and a lower surface of the window substrate, the carrier tape sealing the window at the lower surface. Bond pads on an active surface of a MEMS die are flip chip mounted to terminals on the upper surface of the window substrate, a MEMS active area of the MEMS die being aligned with the window of the window substrate. A magnet is mounted to an inactive surface of the MEMS die.

MEMS package with MEMS die, magnet, and window substrate fabrication method and structure

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Gilbert, AZ, United States of America

Shaun Bowers