National Technology & Engineering Solutions of Sandia, LLC

The Government of the United States as Represented by the Director, National Security Agency

Shashank Misra

Evan Michael Anderson

Scott William Schmucker

Tzu-Ming Lu

Daniel Robert Ward

DeAnna Marie Campbell

David R Wheeler

George T Wang

Andrew Jay Leenheer

Aaron Michael Katzenmeyer

Juan Pedro Mendez Granado

Andrew David Baczewski

Jeffrey Andrew Ivie

Xujiao Gao

Robert Butera

Esther Frederick

A process for area selective atomic layer deposition (ALD) at the near atomic scale (sub 10 nm) is disclosed. A substrate surface is cleaned and terminated with hydrogen and a pattern written in the hydrogen terminated surface by selectively depassivating the surface using scanning tunneling microscope lithography. The depassivated regions are subjected to a halogen flux with the thus passivated regions further subjected to a functionalization process creating functionalized regions. The role of hydrogen and halogen can be inverted to invert the tone of the pattern. The substrate is then subjected to the ALD process, with growth occurring only in the non-functionalized regions. The substrate may then optionally be subjected to selective etching to remove the functionalized regions and the portions of the substrate under the functionalized regions.

Area selective deposition templated by hydrogen and halogen resists

A vertical tunneling field-effect transistor and a method for its manufacture are provided. According to methods herein disclosed, oppositely doped source and drain regions are formed, and an APAM delta layer is formed in the surface of the transistor substrate, beneath a metal gate, in electrical contact with, e.g., the source region. A dielectric layer intervenes between the substrate surface and the metal gate. An epitaxial cap layer directly over the APAM layer forms a dielectric layer interface with a dielectric layer, which is located between the epitaxial cap layer and the metal gate. A vertical channel is defined for tunneling between the APAM delta layer and an induced conduction channel adjacent to the dielectric layer interface that is formed in operation, and that is in electrical contact with, e.g., the drain region.

Vertical tunneling field-effect transistor with enhanced current confinement

A method of Atomic Precision Advanced Manufacturing (APAM) is provided, in which a substrate is doped from a dopant precursor gas. The method involves covering a surface of the substrate with a hard mask, selectively removing material from the hard mask such that selected areas of the substrate surface are laid bare, exposing the laid-bare areas to the dopant precursor gas, and heating the substrate so as to incorporate dopant from the dopant precursor gas into the substrate surface.

Method of chemical doping that uses CMOS-compatible processes

In a method of atomic precision advanced manufacturing (APAM), an atomic or molecular resist layer on a substrate surface is selectively depassivated by locally exciting the substrate surface with an optical beam effective to eject adsorbed atoms or molecules from the substrate surface. The substrate surface is further processed by exposing it to a precursor gas, decomposing the precursor gas to release a dopant, and incorporating the dopant into the substrate surface.

Photolithography of atomic layer resist

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Albuquerque, NM, United States of America

Shashank Misra